Panasonic 2SD2258 Datasheet
Transistor
2SD2258 (Tentative)
Silicon NPN epitaxial planer type
For low-frequency output amplification
Features
■
●
Darlington connection.
●
High foward current transfer ratio hFE.
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Ratings
60
50
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
6.9±0.1
4.00.7 0.8
0.15
0.65 max.
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1.2±0.1
+
0.1
0.45
–
0.05
Internal Connection
1.05
±0.05 (1.45)
0.21.01.0
–0.05
+0.1
321
0.45
1:Emitter
2:Collector
3:Base
MT2 Type Package
0.65
max.
Unit: mm
2.5±0.1
0.5
4.5±0.114.5±0.5
2.5±0.1
(HW type)
C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
*1
hFE Rank classification
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Rank Q R S
h
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
FE
B
≈200Ω
Conditions
min
typ
VCB = 45V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
*1
VCE = 10V, IC = 1A
IC = 1A, IB = 1mA
IC = 1A, IB = 1mA
*2
*2
VCB = 10V, IE = –50mA, f = 200MHz
60
50
5
4000
150
E
max
Unit
0.1
0.1
40000
1.8
2.2
MHz
*2
Pulse measurement
µA
µA
V
V
V
V
V
1
Transistor
2SD2258
PC — Ta V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
10
FE
10
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0
0 20016040 12080
2
or more, and
Ambient temperature Ta (˚C
hFE — I
C
5
TC=100˚C
4
25˚C
–25˚C
VCE=10V
— I
)
V
(
10
CE(sat)
3
25˚C
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 310.10.03 0.3
)
Collector current IC (A
Cob — V
24
)
pF
(
20
ob
16
12
CE(sat)
Ta=–25˚C
100˚C
CB
C
IC/IB=1000
)
IE=0
f=1MHz
Ta=25˚C
)
V
(
10
BE(sat)
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
V
— I
BE(sat)
3
Ta=–25˚C
1
0.01 310.10.03 0.3
25˚C
100˚C
Collector current IC (A
C
IC/IB=1000
)
3
10
Forward current transfer ratio h
2
10
0.01 310.10.03 0.3
Collector current IC (A
8
4
Collector output capacitance C
0
1 3 10 30 100
)
Collector to base voltage VCB (V
)
2
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