Panasonic 2SD2242A, 2SD2242 Datasheet

Po wer Transistors

2SD2242, 2SD2242A

Silicon NPN triple diffusion planar type Darlington

For power amplification

Features

■

●

High foward current transfer ratio h

●

High-speed switching

●

Allowing supply with the radial taping

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD2242
2SD2242A
2SD2242

2SD2242A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

V

V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

FE

=25˚C)

C

Ratings

60
80
60
80

5
8
4

15

2

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

4.2±0.2

13.0±0.2

18.0±0.5
Solder Dip

C1.0

Internal Connection

0.65±0.1

1.05±0.10.35±0.1

0.55±0.1

123

2.5±0.2 2.5±0.2

B

5.0±0.1

1.010.0±0.2

90°

2.5±0.2

1.2±0.1

MT4 Type Package

C

Unit: mm

C1.0

2.25±0.2

0.55±0.1

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current

2SD2242
2SD2242A
2SD2242

2SD2242A
Emitter cutoff current
Collector to emitter
voltage

2SD2242

2SD2242A

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

2000 to 5000

4000 to 10000

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V

min

60

80
1000
2000

typ

20

0.5

E

max

200
200
500
500

Unit

µA

µA

2

mA

V

10000

2.5
2
4

V

V

MHz

µs

4
1

µs
µs

1

Po wer Transistors 2SD2242, 2SD2242A

PC—Ta IC—V

20

)
W

(

C

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

TC=100˚C

1

–25˚C

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

(1) TC=Ta
(2) Without heat sink

(1)

(2)

V

CE(sat)—IC

(P

=2.0W)

C

)

IC/IB=250

25˚C

)

CE

10

8

)
A

(

C

6

4

Collector current I

2

0

0108264

IB=4.0mA

T

3.5mA

3.0mA

Collector to emitter voltage VCE (V

hFE—I

C

5

10

FE

4

10

3

10

2

10

TC=100˚C

25˚C

–25˚C

Forward current transfer ratio h

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

=25˚C

C

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

VCE=3V

IC—V

BE

10

8

)
A

(

C

6

TC=100˚C

4

Collector current I

2

0

03.20.8 2.41.6

)

Base to emitter voltage VBE (V

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

)

Collector to base voltage VCB (V

25˚C

–25˚C

CB

VCE=3V

IE=0
f=1MHz
T

=25˚C

C

)

)

Area of safe operation (ASO) R

100

30

)

I

CP

10

A

(

I

C

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

10ms

DC

Non repetitive pulse

=25˚C

T

C

t=1ms

2SD2242

2SD2242A

Collector to emitter voltage VCE (V

1000

)
˚C/W

(

100

(t)

th

10

1

Thermal resistance R

0.1

–3

10

)

–2

10

2

—t

th(t)

Note: Rth was measured at Ta=25˚C and under natural convection.

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

110

Time t (s

10 10

)

2

10

3

4

10