Panasonic 2SD2225 Datasheet

Transistor

2SD2225

Silicon NPN epitaxial planer type

For low-frequency amplification
Complementary to 2SB1473

Features

■

●

High collector to emitter voltage V

●

Optimum for low-frequency driver amplification.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

of 120V.

CEO

Ratings

–55 ~ +150

120
120

5
1

0.5
1

150

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

V

CEO

V

EBO

h

FE1

h

FE2

h

FE3

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank Q R S

h

FE1

90 ~ 155 130 ~ 220 185 ~ 330

Conditions

IC = 0.1mA, IB = 0
IE = 10µA, IC = 0

*1

VCE = 10V, IC = 150mA
VCE = 5V, IC = 500mA
VCE = 5V, IC = 100mA
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA

*2

*2

*2

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

120

90

typ

max

Unit

V

5

V

330

50

100

0.15

0.9

*2

200

11.5

1

1.2
MHz

20

*2

Pulse measurement

V
V

pF

1

Transistor

2SD2225

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

C

IC/IB=10

25˚C

75˚C

Collector current IC (A

)

V

25˚C

CE(sat)

Ta=75˚C

–25˚C

fT — I

— I

E

C

IC/IB=10

)

VCB=10V
Ta=25˚C

)

CE

200

160

)

mA

(

C

120

80

Collector current I

40

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

–25˚C

Collector current IC (A

Ta=25˚C

=1.0mA

I

B

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

C

=10

I

C/IB

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

–1 –3 –10 –30 –100

Emitter current IE (mA

Cob — V

80

)
pF

70

(

ob

60

50

40

30

20

10

Collector output capacitance C

0

1 3 10 30 100

CB

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)