Panasonic 2SD2222 Datasheet

Po wer Transistors

2SD2222

Silicon NPN triple diffusion planar type Darlington

For power amplification
Complementary to 2SB1470

Features

■

●

Optimum for 120W HiFi output

●

High foward current transfer ratio h

●

Low collector to emitter saturation voltage V

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

FE

=25˚C)

C

Ratings

160
160

5

15

8

150

3.5

150

–55 to +150

CE(sat)

Unit

V
V
V
A
A

W

˚C
˚C

20.0±0.5

6.010.0

26.0±0.520.0±0.5

1.5

1.5

2.5

Solder Dip

10.9±0.5

123

Internal Connection

B

φ 3.3±0.2

4.02.0

2.0±0.3

3.0±0.3

1.0±0.2

5.45±0.3

Unit: mm

5.0±0.3

3.0

3.0

2.0

1.5

2.7±0.3

0.6±0.2

1:Base
2:Collector
3:Emitter

TOP–3L Package

C

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

3500 to 10000 7000 to 20000

FE2

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 160V, IE = 0
VCE = 160V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 7mA
IC = 7A, IB = 7mA
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 7A, IB1 = 7mA, IB2 = –7mA,
VCC = 50V

min

160

10000

3500

typ

20

1.2

E

max

100
100
100

Unit

µA
µA
µA

V

20000

3
3

V
V

MHz
2
6

µs
µs
µs

1

Po wer Transistors 2SD2222

PC—Ta IC—V

200

)

180

W

(

160

C

140

120

100

80

60

40

20

Collector power dissipation P

0

0 16040 12080 14020 10060

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.1 1 10 1000.3 3 30

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(1)

(2)
(3)

(P

=3.5W)

C

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=1000

TC=–25˚C

25˚C

125˚C

Collector current IC (A

)

CE

10

9

8

)
A

(

7

C

6

5

4

3

Collector current I

2

1

0

0164128142106

)

Collector to emitter voltage VCE (V

hFE—I

5

10

FE

4

10

TC=125˚C

3

10

25˚C

2

10

C

–25˚C

T

C

IB=1.0mA

0.9mA

0.8mA

0.7mA

0.6mA

VCE=5V

=25˚C

0.5mA

0.4mA

0.3mA

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10

)
pF

(

ob

10

10

10

V

CE(sat)—IC

IC/IB=1000

3

TC=–25˚C

1

25˚C

125˚C

0.1 1 10 1000.3 3 30

Collector current IC (A

Cob—V

4

3

2

CB

IE=0
f=1MHz
T

=25˚C

C

)

Forward current transfer ratio h

Collector output capacitance C

10

0.1 1 100.03 300.3 3

Collector current IC (A

)

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

)

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
012108264

Collector current IC (A

2

ton, t

, tf — I

stg

Pulsed tw=1ms
Duty cycle=1%

=1000 (–IB1=IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

C

t

stg

t

on

t

f

)

Area of safe operation (ASO)

100

30

)

10

A

(

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

I

CP

I

C

Non repetitive pulse

=25˚C

T

C

t=1ms

10ms

DC

)