Panasonic 2SD2220 Datasheet
Po wer Transistors
2SD2220
Silicon NPN triple diffusion planar type Darlington
For low-frequency amplification
Features
■
●
Suitable for the driver circuit of a motor, a printer hammer and
like that, since this transistor is designed for the high forward
current transfer ratio h
●
A shunt resistor is omitted from the driver
●
Allowing supply with the radial taping
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25°C)
Junction temperature
Storage temperature
FE
Symbol
=25˚C)
C
Ratings
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
100
80
5
1.5
1
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
7.5±0.2 4.5±0.2
3.8±0.2
10.8±0.216.0±1.0
2.5±0.1
0.7±0.1
0.8C
0.7±0.1
0.5±0.1
2.5±0.22.5±0.2
123
Internal Connection
B
0.85±0.10.65±0.1
1.0±0.1
Unit: mm
90°
0.8C
0.4±0.1
2.05±0.2
MT3 Type Package
0.8C
1:Emitter
2:Collector
3:Base
C
E
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
*
hFE Rank classification
Rank Q R
h
4000 to 10000 8000 to 20000
FE
C
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
V
BE(sat)
f
T
=25˚C)
Conditions
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 1A
IC = 1A, IB = 1mA
IC = 1A, IB = 1mA
VCB = 10V, IE = –50mA, f = 200MHz
min
100
80
5
4000
typ
150
max
100
100
20000
1.8
2.2
Unit
nA
nA
V
V
V
V
V
MHz
1
Po wer Transistors 2SD2220
PC—Ta V
2.0
)
W
(
1.6
C
1.2
0.8
0.4
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
100000
FE
30000
10000
TC=100˚C
3000
1000
Without heat sink
hFE—I
25˚C
–25˚C
C
VCE=10V
)
CE(sat)—IC
V
(
10
CE(sat)
3
TC=–25˚C
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 310.10.03 0.3
)
100˚C
25˚C
Collector current IC (A
Cob—V
24
)
pF
(
20
ob
16
12
8
CB
IC/IB=1000
)
IE=0
f=1MHz
T
=25˚C
C
)
V
(
10
BE(sat)
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
V
BE(sat)—IC
3
1
0.01 310.10.03 0.3
25˚C
TC=–25˚C
100˚C
Collector current IC (A
IC/IB=1000
)
300
Forward current transfer ratio h
100
0.01 310.10.03 0.3
Collector current IC (A
4
Collector output capacitance C
0
1 3 10 30 100
)
Collector to base voltage VCB (V
)
2
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