Panasonic 2SD2216 Datasheet

Transistor

2SD2216

Silicon NPN epitaxial planer type

For general amplification
Complementary to 2SB1462

Features

■

●

High foward current transfer ratio hFE.

●

Low collector to emitter saturation voltage V

●

SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

60
50

200
100
125
125

–55 ~ +125

7

CE(sat)

.

Unit

V
V

V
mA
mA

mW

˚C
˚C

1.6±0.15

0.8±0.1 0.40.4

1

0.5

1.6±0.1

1.0±0.1

0.5

2

0.3

0.75±0.15

0.45±0.1

1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package

0.2±0.1

0 to 0.1

Marking symbol : Y

3

Unit: mm

–0.05

+0.1

0.2

–0.05

+0.1

0.15

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE1

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

*

h

FE1

h

FE2

V

CE(sat)

f

T

C

ob

Rank Q R S

h

FE1

160 ~ 260 210 ~ 340 290 ~ 460

Marking Symbol YQ YR YS

Conditions

VCB = 20V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
VCE = 2V, IC = 100mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

60
50

7

160

90

typ

0.1
150

3.5

max

0.1

100

460

0.3

Unit

µA
µA

V
V
V

V

MHz

pF

1

Transistor

2SD2216

PC — Ta IC — V

150

)
mW

125

(

C

100

75

50

25

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — V

BE

240

200

)
mA

(

160

C

120

Ta=75˚C

80

Collector current I

40

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

25˚C

–25˚C

VCE=10V

CE

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

0108264

)

Collector to emitter voltage VCE (V

IC — I

240

VCE=10V
Ta=25˚C

200

)
mA

(

160

C

120

80

Collector current I

40

0

0 1000800200 600400

)

Base current IB (µA

Ta=25˚C

IB=160µA

140µA

120µA
100µA

80µA

60µA

40µA
20µA

B

)

1200

1000

)
µA

(

800

B

600

400

Base current I

200

0

01.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

IB — V

BE

VCE=10V
Ta=25˚C

V

— I

CE(sat)

25˚C

C

IC/IB=10

Ta=75˚C

–25˚C

Collector current IC (mA

)

)

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

2

VCE=10V

fT — I

E

300

)

240

MHz

(

T

180

120

60

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Emitter current IE (mA

VCB=10V
Ta=25˚C

)