Panasonic 2SD2215A, 2SD2215 Datasheet

Po wer Transistors

2SD2215, 2SD2215A

Silicon NPN triple diffusion planar type

For power amplification

Features

■

●

High collector to base voltage V

●

I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature

Electrical Characteristics (T

■

Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank Q P

h

FE1

2SD2215
2SD2215A
2SD2215
2SD2215A

TC=25°C
Ta=25°C

Parameter

2SD2215
2SD2215A
2SD2215
2SD2215A

2SD2215
2SD2215A

70 to 150 120 to 250

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CBO

Symbol

I

CES

I

CEO

I

EBO

V

CEO

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

–55 to +150

=25˚C)

C

*

Unit

350
400
250
300

5

1.5

0.75
15

1.3

150

V

V

V
A
A

W

˚C
˚C

Conditions

VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 5V, IC = 0.5A, f = 10MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

10.2±0.3

7.2±0.3

+0.3

–0.

10.0

7.2±0.3

7.0±0.3

3.0±0.2

0.8±0.21.0±0.2

4.6±0.4

7.0±0.3

1.1±0.1

123

4.6±0.4

min

250
300

70
10

1.1±0.1

0.75±0.1

2.3±0.2

213

2.0±0.2

3.0±0.2

0.75±0.1

2.3±0.2

1.0 max.

typ

30

0.5
2

0.5

Unit: mm

3.5±0.2

0.85±0.1

0.4±0.1

1:Base
2:Collector
3:Emitter
I Type Package

Unit: mm

3.5±0.2
0 to 0.15

1.01.0

2.5

0.9±0.1

0.5 max.
0 to 0.15

1:Base
2:Collector
3:Emitter
I Type Package (Y)

max

Unit

1

mA

1
1

mA

1
1

mA

V

250

1.5
1

V
V

MHz

µs
µs
µs

2.5±0.2

2.5±0.2

1

Po wer Transistors 2SD2215, 2SD2215A

PC—Ta IC—V

20

)
W

(

(1)

C

15

10

5

(2)

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 310.10.03 0.3

Collector current IC (A

(1) TC=Ta
(2) Without heat sink

V

CE(sat)—IC

25˚C

(P

=1.3W)

C

TC=100˚C

)

IC/IB=10

–25˚C

)

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

IB=14mA
12mA
10mA

8mA

6mA

Collector current I

0.2

0

012108264

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

TC=100˚C

100

Forward current transfer ratio h

25˚C

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

VCE=10V

Collector current IC (A

T

4mA

2mA

=25˚C

C

IC—V

BE

4.0

3.2

)
A

(

C

2.4

1.6

Collector current I

0.8

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.001 0.01 0.1 10.003 0.03 0.3

)

25˚C

TC=100˚C

–25˚C

fT—I

C

Collector current IC (A

=10V

V

CE

VCE=10V
f=10MHz
T

=25˚C

C

)

)

Area of safe operation (ASO) R

10

3

I

)
A

(

C

Collector current I

CP

I

1

C

0.3

0.1

0.03

0.01

0.003

0.001
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

Collector to emitter voltage VCE (V

10ms

2SD2215A

2SD2215

1000

)
˚C/W

(

100

(t)

th

10

1

Thermal resistance R

0.1

–3

10

)

–2

10

2

—t

th(t)

Note: Rth was measured at Ta=25˚C and under natural convection.

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

110

Time t (s

10 10

)

2

10

3

4

10