Panasonic 2SD2210 Datasheet

Transistor

V

B

IB=1mA

R

on

= ✕1000(Ω)

f=1kHz
V=0.3V

1kΩ

V

A

V

V

VA–V

B

V

B

2SD2210

Silicon NPN epitaxial planer type

For low-voltage output amplification
For muting
For DC-DC converter

Features

■

●

Low collector to emitter saturation voltage V

●

Low ON resistance Ron.

●

High foward current transfer ratio hFE.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse

*1

h

Rank classification

FE1

Rank R S T

h

FE1

Marking Symbol IKR IKS IKT

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

25
20
12

0.5

150

–55 ~ +150

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

*3

R

on

200 ~ 350 300 ~ 500 400 ~ 800

.

CE(sat)

Unit

V
V
V

1

A
A

1

W
˚C
˚C

Conditions

VCB = 25V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A

*2

*2

IC = 0.5A, IB = 20mA
IC = 0.5A, IB = 50mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f= 1MHz

4.5±0.1

1.6±0.2

2.6±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

marking

1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package

1.5±0.1

–0.20

+0.25

0.4max.1.0

4.0

–0.2

+0.1

Marking symbol : IK

min

25
20
12

200

60

*3

Ron Measurement circuit

typ

max

800

0.13

200

10

1.0

*2

Pulse measurement

1

0.4

1.2

Unit: mm

2.5±0.1

0.4±0.04

Unit

µA

V
V
V

V
V

MHz

pF

Ω

1

Transistor

2SD2210

PC — Ta IC — V

1.4

)

W

1.2

(

C

1.0

0.8

0.6

0.4

0.2

Collector power dissipation P

0

100

)

V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

C

IC/IB=10

25˚C

75˚C

Collector current IC (A

)

V

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0654132

)

Collector to emitter voltage VCE (V

hFE — I

1200

FE

1000

800

Ta=75˚C

600

400

200

Forward current transfer ratio h

25˚C

–25˚C

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IB=4.0mA

C

Ta=25˚C

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

VCE=2V

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

–1 –3 –10 –30 –100

Emitter current IE (mA

CE(sat)

Ta=75˚C

25˚C

fT — I

— I

–25˚C

E

C

IC/IB=25

)

VCB=10V
Ta=25˚C

)

Cob — V

24

)

pF

(

20

ob

16

12

8

4

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
Ta=25˚C
f=1MHz

)

Ron — I

1000

300

)

100

Ω

(

on

ON resistance R

Ron measuring circuit

=1mA

I

B

30

10

3

1

0.3

0.1

0.01 0.1 1 100.03 0.3 3

Base current IB (mA

B

V

V

B

A

V

f=1kHz
V=0.3V

)