Panasonic 2SD2185 Datasheet

Transistor

2SD2185

Silicon NPN epitaxial planer type

For low-frequency output amplification
Complementary to 2SB1440

Features

■

●

Low collector to emitter saturation voltage V

●

Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

50
50

150

–55 ~ +150

5
4
3
1

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

4.5±0.1

1.6±0.2

2.6±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

marking

1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package

1.5±0.1

–0.20

+0.25

0.4max.1.0

4.0

–0.2

+0.1

Marking symbol : 1H

Unit: mm

2.5±0.1

0.4±0.04

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank R S

h

FE1

120 ~ 240 170 ~ 340

Marking Symbol 1HR 1HS

Conditions

VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*1

VCE = 2V, IC = 200mA
VCE = 2V, IC = 1.0A
IC = 1A, IB = 50mA
IC = 1A, IB = 50mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHZ

min

50
50

5

120

80

typ

max

340

0.15

0.82
110

23

*2

Pulse measurement

0.1

0.3

1.2

35

Unit

µA

V
V
V

V
V

MHz

pF

1

Transistor

2SD2185

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

C

IC/IB=50

25˚C

100˚C

Collector current IC (A

)

V

CE

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

300

FE

250

200

150

100

50

Forward current transfer ratio h

Ta=75˚C

25˚C

–25˚C

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Ta=25˚C

IB=400µA

350µA
300µA

250µA
200µA
150µA
100µA
50µA

)

C

VCE=2V

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

240

)

200

MHz

(

T

160

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

CE(sat)

fT — I

— I

E

C

Ta=75˚C

25˚C

IC/IB=50

–25˚C

)

VCB=10V
Ta=25˚C

)

)
pF

(

Cob — V

60

50

ob

40

30

20

10

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)