Panasonic 2SD1938-F User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1938(F)

Silicon NPN epitaxial planar type

For low-voltage output amplification

For muting

For DC-DC converter

■ Features

• Low ON resistance R

• High forward current transfer ratio h

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

on

FE

10˚

0.40

3

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

+0.10
–0.05

+0.25

–0.05

+0.2

–0.3

2.8

1.50

2

(0.65)

5˚

0.16

Unit: mm

+0.10
–0.06

■ Absolute Maximum Ratings Ta = 25°C

+0.2

–0.1

+0.3

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

50 V

20 V

25 V

300 mA

500 mA

200 mW

150 °C

Marking symbol: 3W

–0.1

1.1

1.1

0 to 0.1

JEDEC: SOT-346

Mini3-G1 Package

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

CEOIC

Base-emitter voltage V

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

1

Forward current transfer ratio

*

Collector-emitter saturation voltage V

I

CBO

I

EBO

h

CE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

2

ON resistance

*

R

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Rank classification

Rank S T No rank

h

FE

500 to 1 500 800 to 2 500 500 to 2 500

Product of no-rank classification is not marked.

= 1 mA, IB = 020V

VCE = 2 V, IC = 4 mA 0.6 V

BE

VCB = 50 V, IE = 0 0.1 µA

VEB = 25 V, IC = 0 0.1 µA

VCE = 2 V, IC = 4 mA 500 2 500 

FE

= 30 mA, IB = 3 mA 0.1 V

VCB = 6 V, IE = −4 mA, f = 200 MHz 80 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 7 pF

ob

on

2: Ron Measuremet circuit

*

IB = 1 mA

1.0 Ω

1 kΩ

f = 1 kHz
V = 0.3 V

V

V

V

V

B

A

0.4±0.2

Publication date: August 2004 SJC00313AED

= V

R

on

V

B

× 1 000 (Ω)

− V

A

B

1

2SD1938(F)

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

250

a

)

200

mW
(

C

150

100

50

Collector power dissipation P

0

0

20

80

60

40

100

120 160140

Ambient temperature Ta (°C

V

 I

/ IB = 10

I

C

CE(sat)

Ta = 85°C

0.1

)
V

(

CE(sat)

0.01

Collector-emitter saturation voltage V

0.001
1 10 100

C

−25°C

25°C

Collector current IC (mA

IC  V

IB = 10 µA

hFE  I

25°C

−25°C

CE

= 25°C

T

a

8 µA

6 µA

4 µA

2 µA

)

VCE (V

C

= 2 V

V

CE

1 000

100

90

80

)
A

70

(m

C

60

50

40

30

Collector current I

20

10

0

0 1.41.21.00.80.2 0.60.4

100

(pF)

ob

C

10

Collector output capacitance

(Common base, input open circuited)

1

0

)

18

16

)

14

A

(m

12

C

10

8

6

Collector current I

4

2

0

024681012

)

)

Collector-emitter voltage

1

600

400

1

Ta = 85°C

FE

1

200

000

1

800

600

400

Forward current transfer ratio h

200

0

10.1 10 100

Collector current IC (mA

IC  V

BE

VCE = 2 V

Ta = 85°C

−25°C

25°C

Base-emitter voltage VBE (V

Cob  V

510152025303540

CB

f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

)

)

2

SJC00313AED