
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■ Features
• Low ON resistance R
• High forward current transfer ratio h
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
on
FE
10˚
0.40
3
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
+0.10
–0.05
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
(0.65)
5˚
0.16
Unit: mm
+0.10
–0.06
■ Absolute Maximum Ratings Ta = 25°C
+0.2
–0.1
+0.3
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
50 V
20 V
25 V
300 mA
500 mA
200 mW
150 °C
Marking symbol: 3W
–0.1
1.1
1.1
0 to 0.1
JEDEC: SOT-346
Mini3-G1 Package
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEOIC
Base-emitter voltage V
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
1
Forward current transfer ratio
*
Collector-emitter saturation voltage V
I
CBO
I
EBO
h
CE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
2
ON resistance
*
R
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Rank classification
Rank S T No rank
h
FE
500 to 1 500 800 to 2 500 500 to 2 500
Product of no-rank classification is not marked.
= 1 mA, IB = 020V
VCE = 2 V, IC = 4 mA 0.6 V
BE
VCB = 50 V, IE = 0 0.1 µA
VEB = 25 V, IC = 0 0.1 µA
VCE = 2 V, IC = 4 mA 500 2 500
FE
= 30 mA, IB = 3 mA 0.1 V
VCB = 6 V, IE = −4 mA, f = 200 MHz 80 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 7 pF
ob
on
2: Ron Measuremet circuit
*
IB = 1 mA
1.0 Ω
1 kΩ
f = 1 kHz
V = 0.3 V
V
V
V
V
B
A
0.4±0.2
Publication date: August 2004 SJC00313AED
= V
R
on
V
B
× 1 000 (Ω)
− V
A
B
1

2SD1938(F)
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
250
a
)
200
mW
(
C
150
100
50
Collector power dissipation P
0
0
20
80
60
40
100
120 160140
Ambient temperature Ta (°C
V
I
/ IB = 10
I
C
CE(sat)
Ta = 85°C
0.1
)
V
(
CE(sat)
0.01
Collector-emitter saturation voltage V
0.001
1 10 100
C
−25°C
25°C
Collector current IC (mA
IC V
IB = 10 µA
hFE I
25°C
−25°C
CE
= 25°C
T
a
8 µA
6 µA
4 µA
2 µA
)
VCE (V
C
= 2 V
V
CE
1 000
100
90
80
)
A
70
(m
C
60
50
40
30
Collector current I
20
10
0
0 1.41.21.00.80.2 0.60.4
100
(pF)
ob
C
10
Collector output capacitance
(Common base, input open circuited)
1
0
)
18
16
)
14
A
(m
12
C
10
8
6
Collector current I
4
2
0
024681012
)
)
Collector-emitter voltage
1
600
400
1
Ta = 85°C
FE
1
200
000
1
800
600
400
Forward current transfer ratio h
200
0
10.1 10 100
Collector current IC (mA
IC V
BE
VCE = 2 V
Ta = 85°C
−25°C
25°C
Base-emitter voltage VBE (V
Cob V
510152025303540
CB
f = 1 MHz
= 25°C
T
a
Collector-base voltage VCB (V
)
)
2
SJC00313AED

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semiconductors described in this book
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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