Panasonic 2SD1478A User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

B

C

E

Transistors

2SD1478A

Silicon NPN epitaxial planar type darlington

For low frequency amplification

 Features

 Forward current transfer ratio hFE is designed high, which is appropriate to the

driver circuit of motors and printer hammer.

 A shunt resistor is omitted from the driver.

 Package

Code

Mini3-G1
Pin Name

1: Base

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

60 V

50 V

5 V

500 mA

750 mA

200 mW

150

-55 to +150

°C

°C

2: Emitter

3: Collector

 Marking Symbol: 2O

 Internal Connection

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open) I

Emitter-base cutoff current (Collector open) I

1,

2

*

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

*

1

*

1

*

Transition frequency f

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Rank Q R

h

FE

4 000 to 10 000 8 000 to 20 000

CBOIC

CEOIC

EBOIE

CBO

EBO

h

FE

V

CE(sat)IC

V

BE(sat)IC

T

= 100 mA, IE = 0 60 V

= 1 mA, IB = 0 50 V

= 100 mA, IC = 0 5 V

VCB = 25 V, IE = 0 100 nA

VEB = 4 V, IC = 0 100 nA

VCE = 10 V, IC = 500 mA 4 000 20 000

= 500 mA, IB = 0.5 mA 2.5 V

= 500 mA, IB = 0.5 mA 3.0 V

VCB = 10 V, IE = -50 mA, f = 200 MHz 200 MHz



Publication date: October 2008 SJC00414AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0

40

80

120 160

0

80

160

240

2SD1478A_ PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C)

10

−1

1 10 10

2

10

−1

1

10

10

2

10

3

2SD1478A_ IC-V

CE

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V)

Ta = 25°C

IB = 50 µA

45 µA
40 µA

35 µA

30 µA
25 µA
20 µA
15 µA
10 µA

5 µA

10

−2

10

−1

1 10

10

−1

10

1

2SD1478A_ V

CE(sat)-IC

Collector-emitter saturation voltage V

CE(sat)

(

V

)

Collector current IC (A)

IC / IB = 1 000

Ta = 75°C

25°C

−25°C

10

−2

10

−1

1 10

10

−1

10

1

2SD1478A_ V

BE(sat)-IC

Base-emitter saturation voltage V

BE(sat)

(

V

)

Collector current IC (A)

IC / IB = 1 000

Ta = −25°C

25°C
75°C

10

−2

10

−1

1

10

2

10

3

10

4

10

5

2SD1478A_ hFE-I

C

Forward current transfer ratio h

FE

Collector current IC (A)

V

CE

= 10 V

Ta = 75°C

25°C

−25°C

1

10 10

2

0

2

4

6

2SD1478A_ Cob-V

CB

Collector output capacitance

(Common base, input open circuited) C

ob

(pF)

Collector-base voltage VCB (V)

IE = 0
f = 1 MHz
Ta = 25°C

2SD1478A

PC  Ta IC  VCE V

V

 IC hFE  IC Cob  V

BE(sat)

CE(sat)

 I

C

CB

2 SJC00414AED