Panasonic 2SD0814A User Manual

Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0814A (2SD814A)
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
Features
Low noise voltage NV
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing.
CEO
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
stg
185 V
185 V
5V
50 mA
100 mA
200 mW
150 °C
55 to +150 °C
+0.10
0.40
–0.05
3
2
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Marking Symbol: L
+0.25
–0.05
1.50
(0.65)
+0.2
–0.1
1.1
0 to 0.1
+0.2
2.8
+0.3
–0.3
–0.1
1.1
Unit: mm
+0.10
0.16
–0.06
1: Base 2: Emitter 3: Collector
EIAJ: SC-59
Mini3-G1 Package
±0.2
0.4
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
CEOIC
EBOIE
I
CBO
h
FE
CE(sat)IC
Transition frequency f
Collector output capacitance C (Common base, input open circuited)
Noise voltage NV V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R S
h
FE
Publication date: January 2003 SJC00196CED
90 to 155 130 to 220 185 to 330
= 100 µA, IB = 0 185 V
= 10 µA, IC = 05V
VCB = 100 V, IE = 01µA
VCE = 5 V, IC = 10 mA 90 330
= 30 mA, IB = 3 mA 1 V
VCB = 10 V, IE = 10 mA, f = 200 MHz 150 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF
ob
= 10 V, IC = 1 mA, GV = 80 dB 150 mV
CE
Rg = 100 k, Function = FLAT
Note) The part number in the parenthesis shows conventional part number.
1
2SD0814A
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
240
)
200
mW (
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
CE(sat)
25°C
) V
(
CE(sat)
100
10
1
0.1
a
C
IC / IB = 10
Ta = 75°C
25°C
IC V
hFE I
Ta = 75°C
CE
C
25°C
25°C
Ta = 25°C
= 2.0 mA
I
B
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0.2 mA
VCE = 10 V
)
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
012108264
)
Collector-emitter voltage VCE (V
600
500
FE
400
300
200
Forward current transfer ratio h
100
120
100
)
mA (
80
C
60
40
Collector current I
20
0
02.01.60.4 1.20.8
200
)
160
MHz
(
T
120
80
40
Transition frequency f
IC V
BE
VCE = 10 V
25°C
Ta = 75°C
25°C
Base-emitter voltage VBE (V
fT I
E
VCB = 10 V
= 25°C
T
a
)
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
Collector current IC (mA
Cob V
5
(pF)
ob
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
1 3 10 30 100
CB
Collector-base voltage VCB (V
2
)
IE = 0 f = 1 MHz
= 25°C
T
a
0
0.1 1 10 100
Collector current IC (mA
)
0
1 10 100
Emitter current IE (mA
)
)
SJC00196CED
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