Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0814A (2SD814A)
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
CEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
stg
185 V
185 V
5V
50 mA
100 mA
200 mW
150 °C
−55 to +150 °C
+0.10
0.40
–0.05
3
2
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Marking Symbol: L
+0.25
–0.05
1.50
(0.65)
+0.2
–0.1
1.1
0 to 0.1
+0.2
2.8
+0.3
–0.3
–0.1
1.1
Unit: mm
+0.10
0.16
–0.06
5˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
±0.2
0.4
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
CEOIC
EBOIE
I
CBO
h
FE
CE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Noise voltage NV V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R S
h
FE
Publication date: January 2003 SJC00196CED
90 to 155 130 to 220 185 to 330
= 100 µA, IB = 0 185 V
= 10 µA, IC = 05V
VCB = 100 V, IE = 01µA
VCE = 5 V, IC = 10 mA 90 330
= 30 mA, IB = 3 mA 1 V
VCB = 10 V, IE = −10 mA, f = 200 MHz 150 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF
ob
= 10 V, IC = 1 mA, GV = 80 dB 150 mV
CE
Rg = 100 kΩ, Function = FLAT
Note) The part number in the parenthesis shows conventional part number.
1
2SD0814A
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
240
)
200
mW
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
CE(sat)
25°C
)
V
(
CE(sat)
100
10
1
0.1
a
C
IC / IB = 10
Ta = 75°C
−25°C
IC V
hFE I
Ta = 75°C
CE
C
25°C
−25°C
Ta = 25°C
= 2.0 mA
I
B
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0.2 mA
VCE = 10 V
)
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
012108264
)
Collector-emitter voltage VCE (V
600
500
FE
400
300
200
Forward current transfer ratio h
100
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
02.01.60.4 1.20.8
200
)
160
MHz
(
T
120
80
40
Transition frequency f
IC V
BE
VCE = 10 V
25°C
Ta = 75°C
−25°C
Base-emitter voltage VBE (V
fT I
E
VCB = 10 V
= 25°C
T
a
)
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
Collector current IC (mA
Cob V
5
(pF)
ob
C
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
0
1 3 10 30 100
CB
Collector-base voltage VCB (V
2
)
IE = 0
f = 1 MHz
= 25°C
T
a
0
0.1 1 10 100
Collector current IC (mA
)
0
−1 −10 −100
Emitter current IE (mA
)
)
SJC00196CED