Panasonic 2SD0662B, 2SD0662 Datasheet
Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
Features
■
●
High collector to emitter voltage V
●
High transition frequency fT.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD662
2SD662B
2SD662
2SD662B
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
250
400
200
400
5
100
70
600
150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
Unit: mm
1.0
1.0
4.1±0.2 4.5±0.1
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter
voltage
2SD662
2SD662B
Emitter to base voltage
Forward current
transfer ratio
2SD662
2SD662B
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
hFE Rank classification
Symbol
I
CEO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Rank P Q R
h
FE
30 ~ 100 60 ~ 150 100 ~ 220
Conditions
VCE = 100V, IB = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
*
VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
200
400
5
30
30
50
typ
80
max
Unit
2
µA
V
V
220
150
1.2
V
MHz
5
10
pF
1
Transistor
2SD662, 2SD662B
PC — Ta IC — V
800
)
700
mW
(
C
600
500
400
300
200
100
Collector power dissipation P
0
0 20016040 12080
Ambient temperature Ta (˚C
IC — I
B
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
02.01.60.4 1.20.8
Base current IB (mA
VCE=10V
Ta=25˚C
)
CE
120
1.0mA
0.8mA
1.2mA
V
1.6mA
1.4mA
CE(sat)
100
)
mA
(
80
C
60
40
Collector current I
20
0
0108264
)
Collector to emitter voltage VCE (V
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Collector current IC (mA
1.8mA
— I
Ta=25˚C
IB=2.0mA
0.6mA
0.4mA
0.2mA
C
IC/IB=10
Ta=75˚C
25˚C
–25˚C
)
120
100
)
mA
(
C
Collector current I
)
)
mA
(
B
Base current I
80
60
40
20
0
02.01.60.4 1.20.8
3.0
2.5
2.0
1.5
1.0
0.5
0
01.00.80.2 0.60.4
IC — V
BE
VCE=10V
25˚C
Ta=75˚C
–25˚C
Base to emitter voltage VBE (V
IB — V
BE
VCE=10V
Ta=25˚C
Base to emitter voltage VBE (V
)
)
hFE — I
C
360
FE
300
240
180
120
60
Forward current transfer ratio h
0
0.01 0.1 1 100.03 0.3 3
Ta=75˚C
Collector current IC (mA
2
VCE=10V
25˚C
–25˚C
fT — I
E
4
)
)
Ta
(
Ta=25˚C
(
CBO
I
CBO
I
10
3
10
2
10
10
1
0 20016040 12080
160
140
)
MHz
120
(
T
100
80
60
40
Transition frequency f
20
0
–1 –3 –10 –30 –100
)
Emitter current IE (mA
VCB=10V
Ta=25˚C
)
I
— Ta
CBO
VCB=250V
Ambient temperature Ta (˚C
)
Loading...