Panasonic 2SD0661 Datasheet
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Features
■
●
Low noise voltage NV.
●
High foward current transfer ratio hFE.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD661
2SD661A
2SD661
2SD661A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
35
55
35
55
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
0.4
1.0±0.1
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
1.5 R0.9
R0.9
R0.7
0.85
0.55±0.1 0.45±0.05
2.5 2.5
2.5±0.1
1.0
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
Unit: mm
1.0
4.1±0.2 4.5±0.1
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SD661
2SD661A
2SD661
2SD661A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
*
hFE Rank classification
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
NV
Rank R S T
h
FE
210 ~ 340 290 ~ 460 360 ~ 650
Conditions
VCB = 20V, IE = 0
VCE = 20V, IB = 0
min
typ
max
0.1
1
Unit
µA
µA
35
IC = 10µA, IE = 0
V
55
35
IC = 2mA, IB = 0
V
55
IE = 10µA, IC = 0
*
VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
7
210
200
650
1
V
V
MHz
VCE = 10V, IC = 1mA, GV = 80dB
150
mV
Rg = 100kΩ, Function = FLAT
1
Transistor
2SD661, 2SD661A
PC — Ta IC — V
500
)
mW
(
400
C
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IB — V
800
700
600
)
µA
(
500
B
400
BE
VCE=5V
Ta=25˚C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012108264
)
Collector to emitter voltage VCE (V
IC — V
)
mA
(
C
120
100
80
60
Ta=75˚C
25˚C
–25˚C
Ta=25˚C
IB=350µA
300µA
250µA
200µA
150µA
100µA
50µA
)
BE
VCE=5V
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
00.50.40.1 0.30.2
)
100
V
(
30
CE(sat)
10
3
1
IC — I
B
VCE=5V
Ta=25˚C
Base current IB (mA
V
— I
CE(sat)
C
)
IC/IB=10
300
Base current I
200
100
0
01.00.80.2 0.60.4
Base to emitter voltage VBE (V
hFE — I
720
FE
600
480
360
240
120
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
C
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
VCE=5V
)
40
Collector current I
20
0
0 2.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
fT — I
E
500
VCB=5V
Ta=25˚C
)
)
400
MHz
(
T
300
200
100
Transition frequency f
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
Collector current IC (mA
Cob — V
20
)
pF
(
16
ob
12
8
4
25˚C
CB
Ta=75˚C
–25˚C
IE=0
f=1MHz
Ta=25˚C
)
Collector output capacitance C
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Emitter current IE (mA
)
0
0.1 1 10 1000.3 3 30
Collector to base voltage VCB (V
)
2
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