Transistor
2SD638, 2SD639
Silicon NPN epitaxial planer type
For medium-power general amplification
Complementary to 2SB643 and 2SB644
Features
■
●
Low collector to emitter saturation voltage V
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD638
2SD639
2SD638
2SD639
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
7
1
0.5
600
150
–55 ~ +150
CE(sat)
.
Unit
V
V
V
A
A
mW
˚C
˚C
6.9±0.1
1.5
0.4
1.0±0.1
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
1.5 R0.9
R0.9
R0.7
0.85
0.55±0.1 0.45±0.05
2.5 2.5
2.5±0.1
1.0
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
Unit: mm
1.0
4.1±0.2 4.5±0.1
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SD638
2SD639
2SD638
2SD639
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
Conditions
VCB = 20V, IE = 0
VCE = 20V, IB = 0
min
typ
max
0.1
1
Unit
µA
µA
30
IC = 10µA, IE = 0
V
60
25
IC = 2mA, IB = 0
V
50
IE = 10µA, IC = 0
*1
VCE = 10V, IC = 10mA
VCE = 10V, IC = 500mA
*2
IC = 300mA, IB = 30mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
85
40
7
160
340
V
90
0.35
200
6
0.6
MHz
15
*2
Pulse measurement
pF
V
1
Transistor
2SD638, 2SD639
PC — Ta IC — V
800
)
700
mW
(
C
600
500
400
300
200
100
Collector power dissipation P
0
0 20016040 12080
Ambient temperature Ta (˚C
V
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
25˚C
CE(sat)
Ta=75˚C
–25˚C
— I
C
Collector current IC (A
)
IC/IB=10
)
CE
800
700
)
600
mA
(
C
500
400
300
200
Collector current I
100
0
020164128
IB=10mA
9mA
8mA
7mA
6mA
Ta=25˚C
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage VCE (V
V
— I
BE(sat)
100
)
V
(
30
BE(sat)
10
3
1
Ta=–25˚C
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
25˚C
75˚C
Collector current IC (A
C
IC/IB=10
)
800
700
)
600
mA
(
C
500
400
300
200
Collector current I
100
0
0108264
)
Base current IB (mA
hFE — I
300
FE
250
Ta=75˚C
200
150
100
Forward current transfer ratio h
25˚C
–25˚C
50
0
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC — I
B
VCE=10V
Ta=25˚C
)
C
VCE=10V
)
fT — I
E
240
VCB=10V
Ta=25˚C
)
200
MHz
(
T
160
120
80
40
Transition frequency f
0
–1 –3 –10 –30 –100
Emitter current IE (mA
2
)
pF
(
Cob — V
12
10
ob
8
CB
IE=0
f=1MHz
Ta=25˚C
4
10
3
10
)
I
CEO
— Ta
VCE=10V
)
Ta
(
6
4
2
Ta=25˚C
(
CEO
I
CEO
I
2
10
10
Collector output capacitance C
0
1 3 10 30 100
)
Collector to base voltage VCB (V
)
1
0 20016040 12080
Ambient temperature Ta (˚C
)