Panasonic 2SD0639, 2SD0638 Datasheet

Transistor

2SD638, 2SD639

Silicon NPN epitaxial planer type

For medium-power general amplification
Complementary to 2SB643 and 2SB644

Features

■

●

Low collector to emitter saturation voltage V

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD638
2SD639
2SD638

2SD639
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

30
60
25
50

7
1

0.5
600
150

–55 ~ +150

CE(sat)

.

Unit

V

V

V
A
A

mW

˚C
˚C

6.9±0.1

1.5

0.4

1.0±0.1

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

1.5 R0.9

R0.9

R0.7

0.85

0.55±0.1 0.45±0.05

2.5 2.5

2.5±0.1

1.0

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

Unit: mm

1.0

4.1±0.2 4.5±0.1

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base
voltage
Collector to emitter
voltage

2SD638
2SD639
2SD638
2SD639

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

f

T

C

ob

Rank Q R S

h

FE1

85 ~ 170 120 ~ 240 170 ~ 340

Conditions

VCB = 20V, IE = 0
VCE = 20V, IB = 0

min

typ

max

0.1
1

Unit

µA
µA

30

IC = 10µA, IE = 0

V

60
25

IC = 2mA, IB = 0

V

50

IE = 10µA, IC = 0

*1

VCE = 10V, IC = 10mA
VCE = 10V, IC = 500mA

*2

IC = 300mA, IB = 30mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

85
40

7

160

340

V

90

0.35
200

6

0.6
MHz

15

*2

Pulse measurement

pF

V

1

Transistor

2SD638, 2SD639

PC — Ta IC — V

800

)

700

mW

(

C

600

500

400

300

200

100

Collector power dissipation P

0

0 20016040 12080

Ambient temperature Ta (˚C

V

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

25˚C

CE(sat)

Ta=75˚C

–25˚C

— I

C

Collector current IC (A

)

IC/IB=10

)

CE

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

020164128

IB=10mA

9mA

8mA

7mA

6mA

Ta=25˚C

5mA

4mA

3mA

2mA

1mA

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

1

Ta=–25˚C

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

25˚C

75˚C

Collector current IC (A

C

IC/IB=10

)

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

0108264

)

Base current IB (mA

hFE — I

300

FE

250

Ta=75˚C

200

150

100

Forward current transfer ratio h

25˚C

–25˚C

50

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC — I

B

VCE=10V
Ta=25˚C

)

C

VCE=10V

)

fT — I

E

240

VCB=10V
Ta=25˚C

)

200

MHz

(

T

160

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

2

)
pF

(

Cob — V

12

10

ob

8

CB

IE=0
f=1MHz
Ta=25˚C

4

10

3

10

)

I

CEO

— Ta

VCE=10V

)
Ta

(

6

4

2

Ta=25˚C

(

CEO

I

CEO

I

2

10

10

Collector output capacitance C

0

1 3 10 30 100

)

Collector to base voltage VCB (V

)

1

0 20016040 12080

Ambient temperature Ta (˚C

)