Panasonic 2SD0637 Datasheet

Transistor

2SD637

Silicon NPN epitaxial planer type

For low-power general amplification

Features

■

●

High foward current transfer ratio hFE.

●

Low collector to emitter saturation voltage V

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

60
50

7
200
100
400
150

–55 ~ +150

CE(sat)

.

Unit

V
V

V
mA
mA

mW

˚C
˚C

6.9±0.1

1.5

0.4

1.0±0.1

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

1.5 R0.9

R0.9

R0.7

0.85

0.55±0.1 0.45±0.05

2.5 2.5

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

Unit: mm

1.0

1.0

4.1±0.2 4.5±0.1

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

hFE Rank classification

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

Rank Q R S

h

FE

160 ~ 260 210 ~ 340 290 ~ 460

Conditions

VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0

*

VCE = 10V, IC = 2mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

60
50

7

160

typ

0.3

150

3.5

max

1
1

460

0.5

Unit

µA
µA

V
V
V

V

MHz

pF

1

Transistor 2SD637

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — V

200

160

)
mA

(

C

120

Ta=75˚C

80

Collector current I

40

BE

25˚C

–25˚C

VCE=10V

VCE=10V
Ta=25˚C

IB — V

V

CE(sat)

BE

— I

25˚C

)

C

IC/IB=10

Ta=75˚C

–25˚C

CE

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

0108264

)

Collector to emitter voltage VCE (V

IC — I

240

VCE=10V
Ta=25˚C

200

)
mA

(

160

C

120

80

Collector current I

40

Ta=25˚C

IB=160µA

140µA

120µA
100µA

80µA

60µA

40µA

20µA

B

)

1200

1000

)
µA

(

800

B

600

400

Base current I

200

0

01.00.80.2 0.60.4

Base to emitter voltage VBE (V

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

hFE — I

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

0

0 1000800200 600400

)

300

Base current IB (µA

fT — I

E

)

VCB=10V
Ta=25˚C

)

240

MHz

(

T

180

120

60

Transition frequency f

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

)

IE=0
f=1MHz
Ta=25˚C

)
pF

(

Collector current IC (mA

Cob — V

12

10

ob

8

6

4

2

CB

Collector output capacitance C

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Emitter current IE (mA

)

0

1 3 10 30 100

Collector to base voltage VCB (V

)

2