Panasonic 2SD0602 Datasheet

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.05

0.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SD602, 2SD602A

Silicon NPN epitaxial planer type

For general amplification
Complementary to 2SB710 and 2SB710A

Features

■

●

Low collector to emitter saturation voltage V

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD602
2SD602A
2SD602

2SD602A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

30
60
25
50

500
200
150

–55 ~ +150

5
1

CE(sat)

.

Unit

V

V

V
A

mA

mW

˚C
˚C

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol : W

(2SD602)

(2SD602A)

X

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Marking
Symbol

Rank Q R S

h

Parameter

2SD602
2SD602A
2SD602
2SD602A

FE1

2SD602 WQ WR WS
2SD602A XQ XR XS

85 ~ 170 120 ~ 240 170 ~ 340

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

CE(sat)

f

T

C

ob

VCB = 20V, IE = 0

IC = 10µA, IE = 0

IC = 10mA, IB = 0

IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 10V, IC = 500mA
IC = 300mA, IB = 30mA
VCB = 10V, IE = –50mA*2, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

Conditions

min

30
60
25
50

*2

*2

*2

85
40

typ

max

0.1

Unit

µA

V

V

5

160

0.35

340

0.6

200

6

15

*2

Pulse measurement

V

V

MHz

pF

1

Transistor

2SD602, 2SD602A

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

–25˚C

Collector current IC (A

)

C

IC/IB=10

)

CE

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

020164128

IB=10mA

9mA

8mA

7mA

6mA

Ta=25˚C

5mA

4mA

3mA

2mA

1mA

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

1

Ta=–25˚C

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

C

IC/IB=10

25˚C

75˚C

)

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

0108264

)

Base current IB (mA

hFE — I

300

FE

250

Ta=75˚C

200

25˚C

–25˚C

150

100

50

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC — I

B

VCE=10V
Ta=25˚C

)

C

VCE=10V

)

fT — I

E

240

)

200

MHz

(

T

160

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

2

VCB=10V
Ta=25˚C

)

)
pF

(

Cob — V

12

10

ob

8

6

4

2

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

IE=0
f=1MHz
Ta=25˚C

120

)
V

(

100

CER

80

60

40

20

Collector to emitter voltage V

0

1 10 100 10003 30 300

)

Base to emitter resistance RBE (kΩ

V

— R

CER

BE

2SD602A

2SD602

IC=2mA
Ta=25˚C

)