Panasonic 2SD0601A User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD0601A (2SD601A)

Silicon NPN epitaxial planar type

For general amplification

Complementary to 2SB0709A (2SB709A)

■ Features

• High foward current transfer ratio h

• Low collector to emitter saturation voltage V

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing.

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

FE

CBO

CEO

EBO

C

CP

C

j

stg

CE(sat)

60 V

50 V

7V

100 mA

200 mA

200 mW

150 °C

−55 to +150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10˚

Marking Symbol: Z

+0.25

–0.05

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

+0.2

2.8

+0.3

–0.3

–0.1

1.1

Unit: mm

+0.10

0.16

–0.06

5˚

1: Base
2: Emitter
3: Collector

Mini3-G1 Package

0.4±0.2

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cut-off current (Emitter open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

FE1

h

FE2

CE(sat)IC

Transition frequency f

Noise voltage NV V

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S No-rank

h

FE1

160 to 260 210 to 340 290 to 460 160 to 460

Marking symbol ZQ ZR ZS Z

Product of no-rank is not classified and have no marking symbol for rank.

= 10 µA, IE = 060V

= 2 mA, IB = 050V

= 10 µA, IC = 07V

VCB = 20 V, IE = 0 0.1 µA

VCE = 10 V, IB= 0 100 µA

*VCE = 10 V, IC = 2 mA 160 460 

VCE = 2 V, IC = 100 mA 90

= 100 mA, IB = 10 mA 0.1 0.3 V

VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz

T

= 10 V, IC = 1 mA, GV = 80 dB 110 mV

CE

Rg = 100 kΩ, Function = FLAT

VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF

ob

Note) The part number in the parenthesis shows conventional part number.

Publication date: April 2003 SJC00190BED

1

2SD0601A

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

240

)

200

mW
(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

IC  V

BE

200

160

)

mA
(

C

120

80

Collector current I

40

0

0 2.01.60.4 1.20.8

Base-emitter voltage VBE (V

Ta = 75°C

25°C

−25°C

a

)

VCE = 10 V

)

IC  V

60

50

)

mA
(

40

C

30

20

Collector current I

10

0

0108264

Collector-emitter voltage VCE (V

IC  I

240

VCE = 10 V

= 25°C

T

a

200

)

mA
(

160

C

120

80

Collector current I

40

0

0 1 000800200 600400

Base current IB (µA

CE

B

Ta = 25°C

IB = 160 µA

140 µA

120 µA

100 µA

80 µA

60 µA

40 µA

20 µA

)

IB  V

BE

1 200

1 000

)

800

µA

(

B

600

400

Base current I

200

0

0 1.00.80.2 0.60.4

)

Base-emitter voltage VBE (V

V

CE(sat)

100

)
V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

25°C

 I

VCE = 10 V

= 25°C

T

a

C

IC / IB = 10

Ta = 75°C

−25°C

)

)

hFE  I

C

600

500

FE

400

300

200

Forward current transfer ratio h

100

0

0.1 1 10 100

VCE = 10 V

Ta = 75°C

25°C

−25°C

Collector current IC (mA

)

300

)

240

MHz

(

T

180

120

60

Transition frequency f

0

− 0.1 −1 −10 −100

2

fT  I

E

VCB = 10 V
T

a

Emitter current IE (mA

SJC00190BED

= 25°C

)

NV  I

C

240

VCE = 10 V

= 80 dB

G

V

Function = FLAT

200

= 25°C

T

a

)

mV

160

(

120

80

Rg = 100 kΩ

Noise voltage NV

40

0

10 100 1 000

Collector current IC (µA

22 kΩ

4.7 kΩ

)