Panasonic 2SD0592A User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SD0592A (2SD592A)

Silicon NPN epitaxial planar type

For low-frequency output amplification

Complementary to 2SB0621A (2SB621A)

■ Features

• Large collector power dissipation P

• Low collector-emitter saturation voltage V

C

CE(sat)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

60 V

50 V

5V

1 A

1.5 A

750 mW

150 °C

0.45

0.7

2.5

+0.15
–0.1

±0.1

+0.6
–0.2

123

5.0

±0.2

2.5

+0.6
–0.2

±0.2

0.7

±0.2

2.3

±0.2

5.1

±0.5

12.9

Unit: mm

4.0

±0.2

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

TO-92-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

I

CBO

FE1

h

FE2

CE(sat)IC

BE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S

h

FE1

85 to 170 120 to 240 170 to 340

= 10 µA, IE = 060V

= 2 mA, IB = 050V

= 10 µA, IC = 05V

VCB = 20 V, IE = 0 0.1 µA

*VCE = 10 V, IC = 500 mA 85 340 

VCE = 5 V, IC = 1 A 50

= 500 mA, IB = 50 mA 0.2 0.4 V

= 500 mA, IB = 50 mA 0.85 1.20 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 20 pF

ob

Publication date: January 2003 SJC00189CED

Note) The part number in the parenthesis shows conventional part number.

1

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD0592A

PC  T

1.0

)
W

(

0.8

C

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080

a

Ambient temperature Ta (°C

V

 I

CE(sat)

10

)
V

(

CE(sat)

1

25°C

0.1

0.01

Collector-emitter saturation voltage V

0.001

0.01 0.1 1 10

C

IC / IB = 10

Ta = 75°C

−25°C

Collector current IC (A

IC  V

CE

1.50

1.25

)
A

(

1.00

C

0.75

0.50

Collector current I

0.25

0

0108264

)

Collector-emitter voltage VCE (V

V

Ta = −25°C

BE(sat)

25°C

)
V

(

BE(sat)

100

10

1

0.1

75°C

 I

Ta = 25°C

IB = 10 mA

C

IC / IB = 10

9 mA

8 mA

7 mA

6 mA

5 mA

4 mA

3 mA

2 mA

1 mA

)

1.2
VCE = 10 V
T

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

012108264

600

500

FE

400

300

200

Forward current transfer ratio h

100

IC  I

= 25°C

a

Base current IB (mA

hFE  I

Ta = 75°C

25°C

−25°C

B

)

C

V

= 10 V

CE

Base-emitter saturation voltage V

0.01

0.01 0.1 1 10

)

Collector current IC (A

)

0

0.01 0.1 1 10

Collector current IC (A

)

fT  I

E

200

VCB = 10 V

= 25°C

T

a

180

)

160

MHz
(

140

T

120

100

80

60

40

Transition frequency f

20

0

−1 −10 −100

Emitter current IE (mA

)

50

(pF)

ob

C

40

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

2

Cob  V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

SJC00189CED

(V)

V

Collector-emitter voltage

)

V

 R

120

100

CER

80

60

40

20

(Resistor between B and E)

0

0.1 1 10 100

CER

BE

IC = 10 mA

= 25°C

T

a

Base-emitter resistance RBE (kΩ

)