Publication date: May 2006 SJC00344AED
Large collector power dissipation P
Low collector-emitter saturation voltage V
Emitter-base voltage (Collector open)
Electrical Characteristics
Emitter-base voltage (Collector open)
Forward current transfer ratio
Base-emitter saturation voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
1 2
3
+0.6
–0.2
4.0±0.2
5.1±0.212.9±0.5
2.3±0.2
0.7±0.2
This product complies with the RoHS Directive (EU 2002/95/EC).
0 16040 12080
0
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
C
(
W
)
Ambient temperature T
a
(°C
)
0 1082 64
0
1.50
1.25
1.00
0.75
0.50
0.25
Ta = 25°C
IB = 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(
A
)
Collector-emitter voltage V
CE
(V
)
0 121082 64
0
1.2
1.0
0.8
0.6
0.4
0.2
VCE = 10 V
Ta = 25°C
Base current I
B
(mA
)
Collector current I
C
(
A
)
0.01 0.1 1 10
0.001
0.01
0.1
1
10
I
C
/ IB = 10
Ta = 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(A
)
0.01 0.1 1 10
0.01
0.1
1
10
100
I
C
/ I
B
= 10
Ta = −25°C
25°C
75°C
Base-emitter saturation voltage V
BE(sat)
(
V
)
Collector current I
C
(A
)
0.01 0.1 1 10
0
600
500
400
300
200
100
Ta = 75°C
25°C
−25°C
VCE = 10 V
Forward current transfer ratio h
FE
Collector current I
C
(A
)
−1 −10 −100
0
200
160
120
80
40
180
140
100
60
20
VCB = 10 V
Ta = 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(mA
)
1 10 100
0
50
40
30
20
10
IE = 0
f = 1 MHz
Ta = 25°C
Collector-base voltage V
CB
(V
)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0.1 1 10 100
0
120
100
80
60
40
20
IC = 10 mA
Ta = 25°C
Base-emitter resistance R
BE
(kΩ
)
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
This product complies with the RoHS Directive (EU 2002/95/EC).