Panasonic 2SC829, 2SC0829 Datasheet
Transistor
2SC829
Silicon NPN epitaxial planer type
For high-frequency amplification
Features
■
●
Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
Reverse transfer impedance
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
*
h
FE
f
T
C
re
Z
rb
Ratings
30
20
5
30
400
150
–55 ~ +150
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 1mA
VCB = 10V, IC = 1mA, f = 200MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –1mA, f = 2MHz
Unit
V
V
V
mA
mW
˚C
˚C
Conditions
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
min
typ
30
20
5
70
150
230
1.3
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
max
250
1.6
60
Unit: mm
Unit
V
V
V
MHz
pF
Ω
*
hFE Rank classification
Rank B C
h
FE
70 ~ 160 110 ~ 250
1
Transistor 2SC829
PC — Ta IC — V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IB — V
BE
120
100
)
µA
(
80
B
60
40
Base current I
20
0
01.80.6 1.2
Base to emitter voltage VBE (V
VCE=10V
Ta=25˚C
CE
12
IB=100µA
10
)
mA
(
8
C
6
4
Collector current I
2
0
018612
)
)
Collector to emitter voltage VCE (V
V
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
25˚C
Collector current IC (mA
— I
Ta=25˚C
80µA
60µA
40µA
20µA
)
C
IB/IB=10
Ta=75˚C
–25˚C
)
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
02.01.60.4 1.20.8
Base to emitter voltage VBE (V
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
IC — V
BE
VCE=10V
25˚C
Ta=75˚C
–25˚C
hFE — I
Ta=75˚C
25˚C
–25˚C
C
VCE=10V
Collector current IC (mA
)
)
fT — I
600
)
500
MHz
(
T
400
300
200
100
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
VCB=10V
Emitter current IE (mA
2
E
Ta=25˚C
6V
80
)
Ω
70
(
rb
60
50
40
30
20
10
Reverse transfer impedance Z
0
– 0.1 – 0.3 –1 –3 –10
)
Zrb — I
E
f=2MHz
Ta=25˚C
VCB=6V
Emitter current IE (mA
10V
)
2.4
pF
(
re
2.0
1.6
1.2
0.8
0.4
Common emitter reverse transfer capacitance C
0
0.1 1 10 1000.3 3 30
)
Collector to emitter voltage VCE (V
Cre — V
CE
IC=1mA
f=10.7MHz
Ta=25˚C
)
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