Panasonic 2SC6054G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC6054G

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SA2174G

 Features

 High forward current transfer ratio h
 SS-Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing.

FE

 Package

Code

SSMini3-F3

Marking Symbol: 7M
Pin Name

1: Base

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

-55 to +125 °C

stg

60 V

50 V

7 V

100 mA

200 mA

125 mW

125

°C

2: Emitter

3: Collector

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open) I

Collector-emitter cutoff current (Base open) I

Forward current transfer ratio h

Collector-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

CBO

CEO

FE

CE(sat)IC

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

C

= 10 mA, IE = 0 60 V

= 2 mA, IB = 0

50

= 10 mA, IC = 0 7 V

VCB = 20 V, IE = 0 0.1

VCE = 10 V, IB = 0

VCE = 10 V, IC = 2 mA2 mA mA 160 460

= 100 mA, IB = 10 mA 0.1 0.3 V

VCB = 10 V, IE = -2 mA, f = 200 MHz 100 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF

ob

V

mA

100 mA



Publication date: June 2007 SJC00405AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 40 12080

0

140

40

60

20

100

120

80

2SC6054J_PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C

)

0 4 8 12

0

20

10

40

30

60

50

80

70

100

90

2SC6054J_IC-V

CE

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

Ta = 25°C

50 µA

100 µA

150 µA

200 µA

250 µA

300 µA

350 µA

100 µA

400 µA

450 µA

IB = 500 µA

0

0.40.2 0.8 1.00.6 1.2 1.4

0

30

40

50

20

10

60

70

80

90

100

2SC6054J_IC-V

BE

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V

)

VCE = 10 V

Ta = 85°C

25°C

−25°C

0.1 1 10 100

0.01

0.1

1

Collector current IC (mA

)

Collector-emitter saturation voltage V

CE(sat)

(

V

)

2SC6054J_V

CE(sat)-IC

IC /IB = 10

Ta = 85°C

25°C

−25°C

1 10 100

1 000

0

300

350

250

400

50

100

200

150

Collector current IC (mA

)

Forward current transfer ratio h

FE

2SC6054J_hFE-I

C

VCE = 10 V

Ta = 85°C

25°C

−25°C

0 8 2416 32 40

1

10

Collector-base voltage VCB (V

)

2SC6054J_Cob-V

CB

Collector output capacitance

(Common base, input open circuited) C

ob

(

pF

)

f = 1 MHz
Ta = 25°C

2SC6054G

PT  Ta IC  VCE IC  V

V

 IC hFE  IC Cob  V

CE(sat)

BE

CB

2 SJC00405AED