Panasonic 2SC6036G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC6036G

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SA2162G

 Features

 Low collector-emitter saturation voltage V
 SSS-Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing

CE(sat)

 Package

Code

SSSMini3-F2

Marking Symbol: 4U
Pin Name

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

15 V

12 V

5 V

500 mA

1 A

100 mW

125

–55 to +125

°C

°C

1: Base

2: Emitter

3: Collector

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

CBOIC

CEOIC

V

EBOIE

I

CBO

FE

CE(sat)IC

T

C

ob

= 10 mA, IE = 0 15 V

= 1 mA, IB = 0 12 V

= 10 mA, IC = 0 5 V

VCB = 10 V, IE = 0 0.1

VCE = 2 V, IC = 10 mA 270 680

= 200 mA, IB = 10 mA 250 mV

VCB = 2 V, IE = –10 mA, f = 200 MHz–10 mA, f = 200 MHz10 mA, f = 200 MHz 200 MHz

VCB = 10 V, f = 1 MHz 4.5 pF

mA



Publication date: June 2007 SJC00402AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0

20

40

60

80

100

120 140

0

20

40

60

80

100

120

2SC6036_ PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C)

0 1 2 3 4 5 6

0

20

40

60

80

100

120

2SC6036_ IC-V

CE

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V)

140 µA

120 µA

100 µA

80 µA

60 µA

40 µA

20 µA

IB = 160 µA

Ta = 25°C

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

0

10

20

30

40

50

60

100

70

80

90

2SC6036_ IC-V

BE

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V)

V

CE

= 2 V

Ta = 85°C

25°C

−25°C

1 10 100 1 000

0.01

0.1

1

2SC6036_ V

CE(sat)-IC

Collector-emitter saturation voltage V

CE(sat)

(

V

)

Collector current IC (mA)

IC / IB = 20

Ta = 85°C

25°C

−25°C

1 10 100 1 000

0

100

200

300

400

500

700

600

2SC6036_ hFE-I

C

Forward current transfer ratio h

FE

Collector current IC (mA)

V

CE

= 2V

Ta = 85°C

25°C

−25°C

0 5 10 15 20 25 30 35 40

1

10

2SC6036_ Cob-V

CB

Collector-base voltage VCB (V

)

Collector output capacitance

(Common base, input open circuited) C

ob

(

pF

)

f = 1 MHz
Ta = 25°C

2SC6036G

PC  Ta IC  VCE IC  V

V

 IC hFE  IC Cob  V

CE(sat)

BE

CB

2 SJC00402AED