This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC5950G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2122G
Features
High forward current transfer ratio h
Smini typ package, allowing downsizing of the equipment and automatic
insertion through the tape packing
FE
Package
Code
SMini3-F2
Marking Symbol: 7M
Pin Name
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
-55 to +150 °C
stg
60 V
50 V
7 V
100 mA
200 mA
150 mW
150
°C
1: Base
2: Emitter
3: Collector
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open) I
Collector-emitter cutoff current (Base open) I
Forward current transfer ratio h
Collector-emitter saturation voltage V
CBOIC
CEOIC
EBOIE
CBO
CEO
FE
CE(sat)IC
Transition frequency f
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
C
= 10 mA, IE = 0 60 V
= 2 mA, IB = 0 50 V
= 10 mA, IC = 0 7 V
VCB = 20 V, IE = 0 0.1
VCE = 10 V, IB = 0 100
VCE = 10 V, IC = 2 mA 160 460
= 100 mA, IB = 10 mA 0.1 0.3 V
VCB = 10 V, IE = -2 mA, f = 200 MHz 100 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF
ob
mA
mA
Publication date: June 2007 SJC00371AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
0 16040 12080
0
240
200
160
120
80
40
࿐ᐲ Ta (°C
)
ࠦࠢ࠲៊ᄬ P
C
(m
W
)
2SC5632_PC-T
a
0
4 8 12
0
20
40
2SC5950_ IC-V
CE
Collector current I
C
(m
A
)
Collector-emitter voltage VCE (V)
IB = 160 µA
20 µA
40 µA
60 µA
80 µA
100 µA
120 µA
140 µA
Ta = 25°C
0
0.4 0.8 1.2
0
40
80
2SC5950_ IC-V
BE
Collector current I
C
(m
A
)
Base-emitter voltage VBE (V)
Ta = 85°C
25°C
−25°C
V
CE
= 10 V
1 10 100 1 000
0.001
0.01
0.1
1
10
IC / IB = 5
Ta = 75°C
25°C
−25°C
ࠦࠢ࠲ࠛࡒ࠶࠲㑆㘻㔚 V
CE(sat)
(V)
ࠦࠢ࠲㔚ᵹ IC (mA)
2SC5632_V
CE(sat)-IC
0.1 1 10 100
0
300
250
200
150
100
50
VCE = 4 V
Ta = 75°C
25°C
−25°C
⋥ᵹ㔚ᵹჇ₸ h
FE
ࠦࠢ࠲㔚ᵹ IC (mA)
2SC5632_hFE-I
C
2SC5950G
PC Ta IC VCE IC V
V
IC hFE I
CE(sat)
C
BE
2 SJC00371AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
2.00 ±0.20
+0.05
0.30
−0.02
0.425 ±0.050
3
12
(0.65)(0.65)
1.30
±0.10
(5°)
1.25 ±0.10
(0.89)
2.10 ±0.10
±0.10
0.90
(5°)
+0.05
0.13
−0.02
(0.49)
0 to 0.10
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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