Panasonic 2SC5950G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC5950G

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SA2122G

 Features

 High forward current transfer ratio h
 Smini typ package, allowing downsizing of the equipment and　automatic

insertion through the tape packing

FE

 Package

Code

SMini3-F2

Marking Symbol: 7M
Pin Name

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

-55 to +150 °C

stg

60 V

50 V

7 V

100 mA

200 mA

150 mW

150

°C

1: Base

2: Emitter

3: Collector

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open) I

Collector-emitter cutoff current (Base open) I

Forward current transfer ratio h

Collector-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

CBO

CEO

FE

CE(sat)IC

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

C

= 10 mA, IE = 0 60 V

= 2 mA, IB = 0 50 V

= 10 mA, IC = 0 7 V

VCB = 20 V, IE = 0 0.1

VCE = 10 V, IB = 0 100

VCE = 10 V, IC = 2 mA 160 460

= 100 mA, IB = 10 mA 0.1 0.3 V

VCB = 10 V, IE = -2 mA, f = 200 MHz 100 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF

ob

mA

mA



Publication date: June 2007 SJC00371AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 16040 12080

0

240

200

160

120

80

40

๟࿐󰶘ᐲ Ta (°C

)

ࠦ࡟ࠢ࠲៊ᄬ P

C

(m

W

)

2SC5632_PC-T

a

0

4 8 12

0

20

40

2SC5950_ IC-V

CE

Collector current I

C

(m

A

)

Collector-emitter voltage VCE (V)

IB = 160 µA

20 µA

40 µA

60 µA

80 µA

100 µA

120 µA

140 µA

Ta = 25°C

0

0.4 0.8 1.2

0

40

80

2SC5950_ IC-V

BE

Collector current I

C

(m

A

)

Base-emitter voltage VBE (V)

Ta = 85°C

25°C

−25°C

V

CE

= 10 V

1 10 100 1 000

0.001

0.01

0.1

1

10

IC / IB = 5

Ta = 75°C

25°C

−25°C

ࠦ࡟ࠢ࠲࡮ࠛࡒ࠶࠲㑆㘻๺㔚࿶ V

CE(sat)

(V)

ࠦ࡟ࠢ࠲㔚ᵹ IC (mA)

2SC5632_V

CE(sat)-IC

0.1 1 10 100

0

300

250

200

150

100

50

VCE = 4 V

Ta = 75°C

25°C

−25°C

⋥ᵹ㔚ᵹჇ᏷₸ h

FE

ࠦ࡟ࠢ࠲㔚ᵹ IC (mA)

2SC5632_hFE-I

C

2SC5950G

PC  Ta IC  VCE IC  V

V

 IC hFE  I

CE(sat)

C

BE

2 SJC00371AED