Panasonic 2SC5848 User Manual

Transistors

Unit: mm

1: Base
2: Emitter
3: Collector ML3-N2 Package

0.60±0.05

1.00±0.05

2

1

3

0.39

+0.01

−0.03

0.25

±0.05

0.25±0.05

0.50±0.05

0.65±0.01

0.15±0.05

2

1

0.35±0.01

0.05±0.03

0.05±0.03

3

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC5848

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SA2079

 Features

 High forward current transfer ratio h
 Suitable for high-density mounting and douwsizing of the equipment for

ultraminiature leadless package

Package: 0.6 mm × 1.0 mm (hight 0.39 mm)

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

FE

CBO

CEO

EBO

C

CP

C

j

stg

60 V

50 V

7 V

100 mA

200 mA

100 mW

125

–55 to +125

°C

°C

Marking Symbol : 3E

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open) I

Collector-emitter cut-off current (Base open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

CBOIC

CEOIC

EBOIE

CBO

I

CEO

FE

CE(sat)IC

T

C

ob

= 10 µA, IE = 0 60 V

= 2 mA, IB = 0 50 V

= 10 µA, IC = 0 7 V

VCB = 20 V, IE = 0 0.1

VCE = 10 V, IB = 0 100

VCE = 10 V, IC = 2 mA 180 390

µA

µA



= 100 mA, IB = 10 mA 0.1 0.3 V

VCB = 10 V, IE = –2 mA, f = 200 MHz 100 MHz

VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF

Publication date : December 2004 SJC00327AED 1

2SC5848

0

20

40

60

80

100

120 140

0

20

40

60

80

100

120

2SC5848_ PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C)

0 42 6 8 10 12

0

50

40

30

20

10

2SC5848_IC-V

CE

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

IB = 160 µA

140 µA

100 µA

80 µA

60 µA

40 µA

20 µA

120 µA

Ta = 25°C

0 0.2 0.4 0.6 0.8 1.0

0

140

120

100

80

60

40

20

2SC5848_IC-I

B

Collector current I

C

(

mA

)

Base current IB (mA

)

VCE = 10 V
Ta = 25°C

0 0.2 0.4 0.6 0.8

0

3.5

0.5

1.0

1.5

2.0

2.5

3.0

2SC5848_IB-V

BE

Base current I

B

(

mA

)

Base-emitter voltage VBE (V

)

VCE = 10 V
Ta = 25°C

0 0.2 0.4 0.6 0.8 1.0 1.2

0

20

40

60

80

100

120

2SC5848_IC-V

BE

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V

)

VCE = 10V

Ta = 75°C

–25°C

25°C

1 10 100

0.01

0.1

1

2SC5848_V

CE(sat)-IC

Collector-emitter saturation voltage V

CE(sat)

(

V

)

Collector current IC (mA

)

Ta = 75°C

–25°C

25°C

I

C

/ IB = 10

1 10 100 1 000

0

50

100

150

200

250

300

350

Collector current IC (mA

)

Forward current transfer ratio h

FE

2SC5848_hFE-I

C

Ta = 75°C

–25°C

25°C

VCE = 10 V

0 168 24 32 40

1

10

Collector-base voltage VCB (V

)

Collector output capacitance

(Common base, input open circuited)

C

ob

(pF)

2SC5848_Cob-V

CB

f = 1 MHz
Ta = 25°C

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  Ta IC  VCE IC  I

IB  VBE IC  VBE V

CE(sat)

B

 I

C

hFE  IC Cob  V

2 SJC00327AED

CB