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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC5846G
Silicon NPN epitaxial planar type
For general amplification
SSSMini3-F1 Package
■ Features
• High forward current transfer ratio h
• SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
FE
■ Package
• Code
SSSMini3-F2
• Marking Symbol: 7K
• Pin Name
1. Base
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +125 °C
stg
60 V
50 V
7V
100 mA
200 mA
100 mW
125 °C
2. Emitter
3. Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
Collector output capacitance C
(Common base, input open circuited)
Transition frequency f
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
CBOIC
CEOIC
EBOIE
I
CBO
I
CEO
FE
CE(sat)IC
= 10 µΑ, IE = 060V
= 2 mA, IB = 050V
= 10 µΑ, IC = 07V
VCB = 20 V, IE = 0 0.1 µA
VCE = 10 V, IB = 0 100 µA
VCE = 10 V, IC = 2 mA 180 390
= 100 mA, IB = 10 mA 0.1 0.3 V
VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF
ob
VCB = 10 V, IE = −2 mA, f = 200 MHz 100 MHz
T
Publication date: May 2007 SJC00399AED
1
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2SC5846G
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
120
)
100
mW
(
C
80
60
40
20
Collector power dissipation P
0
0 20 40 60 80 100 120 140
a
Ambient temperature Ta (°C
IC V
120
VCE = 10V
100
BE
)
mA
(
80
C
60
40
Ta = 75°C
25°C
Collector current I
20
–25°C
IC V
IB V
CE
IB = 160 µA
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
)
BE
50
T
= 25°C
a
40
)
mA
(
C
30
20
Collector current I
10
0
042681012
)
Collector-emitter voltage VCE (V
3.5
VCE = 10V
= 25°C
T
a
3.0
)
2.5
mA
(
B
2.0
1.5
1.0
Base current I
0.5
140
VCE = 10V
T
120
)
100
mA
(
C
80
60
40
Collector current I
20
0
0 0.2 0.4 0.6 0.8 1.0
1
)
V
(
CE(sat)
0.1
IC I
= 25°C
a
Base current IB (mA
V
CE(sat)
25°C
B
I
Ta = 75°C
–25°C
C
I
C
)
/ IB = 10
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V
hFE I
350
300
FE
250
200
150
100
Forward current transfer ratio h
Ta = 75°C
25°C
–25°C
50
0
1 10 100 1 000
Collector current IC (mA
2
Collector-emitter saturation voltage V
0
0 0.2 0.4 0.6 0.8
)
C
V
= 10V
CE
)
Base-emitter voltage VBE (V
Cob V
10
(pF)
ob
C
Collector output capacitance
(Common base, input open circuited)
1
0168243240
Collector-base voltage VCB (V
CB
f = 1 MHz
= 25°C
T
a
)
)
0.01
1 10 100
Collector current IC (mA
)
SJC00399AED