Panasonic 2SC5846G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC5846G

Silicon NPN epitaxial planar type

For general amplification

SSSMini3-F1 Package

■ Features

• High forward current transfer ratio h

• SSS-mini type package, allowing downsizing and thinning of the

equipment and automatic insertion through the tape packing

FE

■ Package

• Code
SSSMini3-F2

• Marking Symbol: 7K

• Pin Name

1. Base

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +125 °C

stg

60 V

50 V

7V

100 mA

200 mA

100 mW

125 °C

2. Emitter

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Collector output capacitance C
(Common base, input open circuited)

Transition frequency f

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

FE

CE(sat)IC

= 10 µΑ, IE = 060V

= 2 mA, IB = 050V

= 10 µΑ, IC = 07V

VCB = 20 V, IE = 0 0.1 µA

VCE = 10 V, IB = 0 100 µA

VCE = 10 V, IC = 2 mA 180 390 

= 100 mA, IB = 10 mA 0.1 0.3 V

VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF

ob

VCB = 10 V, IE = −2 mA, f = 200 MHz 100 MHz

T

Publication date: May 2007 SJC00399AED

1

2SC5846G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

120

)

100

mW
(

C

80

60

40

20

Collector power dissipation P

0

0 20 40 60 80 100 120 140

a

Ambient temperature Ta (°C

IC  V

120

VCE = 10V

100

BE

)

mA

(

80

C

60

40

Ta = 75°C

25°C

Collector current I

20

–25°C

IC  V

IB  V

CE

IB = 160 µA

140 µA

120 µA

100 µA

80 µA

60 µA

40 µA

20 µA

)

BE

50

T

= 25°C

a

40

)

mA
(

C

30

20

Collector current I

10

0

042681012

)

Collector-emitter voltage VCE (V

3.5
VCE = 10V

= 25°C

T

a

3.0

)

2.5

mA

(

B

2.0

1.5

1.0

Base current I

0.5

140

VCE = 10V
T

120

)

100

mA
(

C

80

60

40

Collector current I

20

0

0 0.2 0.4 0.6 0.8 1.0

1

)
V

(

CE(sat)

0.1

IC  I

= 25°C

a

Base current IB (mA

V

CE(sat)

25°C

B

 I

Ta = 75°C

–25°C

C

I

C

)

/ IB = 10

0

0 0.2 0.4 0.6 0.8 1.0 1.2

Base-emitter voltage VBE (V

hFE  I

350

300

FE

250

200

150

100

Forward current transfer ratio h

Ta = 75°C

25°C

–25°C

50

0

1 10 100 1 000

Collector current IC (mA

2

Collector-emitter saturation voltage V

0

0 0.2 0.4 0.6 0.8

)

C

V

= 10V

CE

)

Base-emitter voltage VBE (V

Cob  V

10

(pF)

ob

C

Collector output capacitance

(Common base, input open circuited)

1

0168243240

Collector-base voltage VCB (V

CB

f = 1 MHz

= 25°C

T

a

)

)

0.01
1 10 100

Collector current IC (mA

)

SJC00399AED