Panasonic 2SC5829 User Manual
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5829
Silicon NPN epitaxial planar type
For high speed switching
Unit: mm
■ Features
• Allowing the small current and low voltage operation
• High transition frequency f
T
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
stg
10 V
7V
2V
10 mA
50 mW
150 °C
−55 to +150 °C
3
1.00
Marking Symbol: X
±0.05
2
±0.05
0.60
1
0.25
±0.05
0.50
3
+0.01
0.39
−0.03
±0.05
0.25
0.65
±0.01
ML3-N2 Package
±0.05
±0.05
0.15
1
2
0.05
1: Base
2: Emitter
3: Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio h
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Forward transfer gain S
Maximum unilateral power gain G
Noise figure NF VCE = 1 V, IC = 1 mA, f = 0.8 GHz 3.5 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
I
VCB = 10 V, IE = 01µA
CBO
I
VEB = 1.5 V, IC = 01µA
EBO
VCE = 1 V, IC = 1 mA 100 200
FE
VCE = 1 V, IC = 1 mA, f = 0.8 GHz 4 GHz
T
VCB = 1 V, IE = 0, f = 1 MHz 0.4 pF
ob
2VCE = 1 V, IC = 1 mA, f = 0.8 GHz 6 dB
21e
VCE = 1 V, IC = 1 mA, f = 0.8 GHz 15 dB
UM
±0.03
0.05
±0.03
±0.01
0.35
Publication date: December 2002 SJC00287AED
1
2SC5829
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
60
50
(mW)
C
40
30
20
10
Collector power dissipation P
0
0 1606020 80 120 14040 100
Ambient temperature Ta (°C)
V
I
1
(V)
CE(sat)
0.1
CE(sat)
/ I
= 10
I
C
B
Ta = 75°C
25°C
−25°C
T
a
= 25°C
Ta = 75°C
25°C
−25°C
IC V
hFE I
CE
C
= 50 µA
I
B
45 µA
40 µA
35 µA
30 µA
25 µA
20 µA
15 µA
10 µA
5 µA
VCE = 1 V
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
0 2.00.4 1.61.20.8
10
(pF)
ob
C
1
a
(mA)
C
6
5
4
3
2
Collector current I
1
0
0615243
Collector-emitter voltage VCE (V)
C
200
FE
160
120
80
40
Forward current transfer ratio h
IC V
BE
VCE = 1 V
Ta = 75°C
25°C
−25°C
Base-emitter voltage VBE (V
Cob V
CB
f = 1 MHz
T
= 25°C
a
)
Collector-emitter saturation voltage V
0.01
1
10 1
Collector current IC (mA)
2
Collector output capacitance
(Common base, input open circuited)
000100
0
0.1 1 10 100
Collector current IC (mA)
0.1
02468 1210
Collector-base voltage VCB (V
)
SJC00287AED
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