Transistors
2SC5654
Silicon NPN epitaxial planer type
For DC-DC converter
Complementary to 2SA2028
■ Features
• Low collector to emitter saturation voltage V
S-mini type package, allowing downsizing and thinning of the
•
equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
C
C
j
stg
CE(sat)
20 V
20 V
5V
1A
3A
150 mW
150 °C
−55 to +150 °C
+0.1
0.3
–0.0
132
(0.65)
(0.65)
1.3
±0.1
2.0
±0.2
10˚
S Mini Type Package (3-pin)
Marking Symbol: 2S
(0.425)
±0.10
±0.1
2.1
1.25
+0.2
–0.1
±0.1
0.9
0.9
0 to 0.1
0.15
5˚
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.05
±0.1
0.2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage V
Collector output capacitance C
Transition frequency f
CBO
CEO
EBO
FE
CE(sat)
ob
T
IC = 10 µA, IE = 020 V
IC = 1 mA, IB = 020V
IE = 10 µA, IC = 05 V
VCE = 2 V, IC = 100 mA 160 560
IC = 200 mA, IB = 10 mA 60 100 mV
VCB = 10 V, IE = 0, f = 1 MHz 12 30 pF
VCB = 10 V, IE = −10 mA, f = 200 MHz 180 MHz
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