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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC5632G
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■ Features
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
T
■ Package
•
Code
SMini3-F2
•
Marking Symbol: 2R
•
Pin Name
1: Base
2: Emitter
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
−55 to +150 °C
stg
15 V
8V
3V
50 mA
150 mW
150 °C
3: Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio h
*
hFE ratio
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: ∆hFE = h
FE2
/ h
FE1
CBOIC
I
EBO
FE
∆h
CE(sat)IC
= 100 µA, IE = 015 V
VEB = 2 V, IC = 02µA
VCE = 4 V, IC = 2 mA 100 350
FEhFE2
T
ob
: VCE = 4 V, IC = 100 µA 0.6 1.5
h
: VCE = 4 V, IC = 2 mA
FE1
= 20 mA, IB = 4 mA 0.1 V
VCE = 5 V, IC = 15 mA, f = 200 MHz 0.6 1.1 GHz
VCB = 10 V, IE = 0, f = 1 MHz 1.0 1.6 pF
Publication date: June 2007 SJC00369AED
1
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2SC5632G
This product complies with the RoHS Directive (EU 2002/95/EC).
160
(mW)
120
C
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C)
V
1
(V)
CE(sat)
−1
10
Ta = 85°C
25°C
−2
10
PC T
CE(sat)
−25°C
I
a
C
I
/ IB = 10
C
IC V
60
IB = 300 µA
40
(mA)
C
20
Collector current I
0
06842
Collector-emitter voltage VCE (V)
hFE I
200
FE
160
120
80
Ta = 85°C
25°C
−25°C
CE
C
Ta = 25°C
250 µA
200 µA
150 µA
100 µA
50 µA
VCE = 4 V
IC V
120
80
(mA)
C
40
Ta = 85°C
Collector current I
0
0 1.20.80.4
Base-emitter voltage VBE (V)
Cob V
2.5
(pF)
ob
C
2
1.5
1
BE
25°C
CB
= 4 V
V
CE
−25°C
f = 1 MHz
T
= 25˚C
a
−3
Collector-emitter saturation voltage V
10
−1
10
Collector current IC (mA)
11010
2
40
Forward current transfer ratio h
0
11010
2
Collector current IC (mA)
0.5
Collector output capacitance
(Common base, input open circuited)
0
11010
2
Collector-base voltage VCB (V)
2
SJC00369AED