Panasonic 2SC5632G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC5632G

Silicon NPN epitaxial planar type

For high-frequency amplification and switching

■ Features

• High transition frequency f

• S-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing

T

■ Package

•

Code
SMini3-F2

•

Marking Symbol: 2R

•

Pin Name

1: Base
2: Emitter

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

−55 to +150 °C

stg

15 V

8V

3V

50 mA

150 mW

150 °C

3: Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Emitter-base cutoff current (Collector open)

Forward current transfer ratio h

*

hFE ratio

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: ∆hFE = h

FE2

/ h

FE1

CBOIC

I

EBO

FE

∆h

CE(sat)IC

= 100 µA, IE = 015 V

VEB = 2 V, IC = 02µA

VCE = 4 V, IC = 2 mA 100 350 

FEhFE2

T

ob

: VCE = 4 V, IC = 100 µA 0.6 1.5 

h

: VCE = 4 V, IC = 2 mA

FE1

= 20 mA, IB = 4 mA 0.1 V

VCE = 5 V, IC = 15 mA, f = 200 MHz 0.6 1.1 GHz

VCB = 10 V, IE = 0, f = 1 MHz 1.0 1.6 pF

Publication date: June 2007 SJC00369AED

1

2SC5632G

This product complies with the RoHS Directive (EU 2002/95/EC).

160

(mW)

120

C

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C)

V

1

(V)

CE(sat)

−1

10

Ta = 85°C

25°C

−2

10

PC  T

CE(sat)

−25°C

 I

a

C

I

/ IB = 10

C

IC  V

60

IB = 300 µA

40

(mA)

C

20

Collector current I

0

06842

Collector-emitter voltage VCE (V)

hFE  I

200

FE

160

120

80

Ta = 85°C

25°C

−25°C

CE

C

Ta = 25°C

250 µA

200 µA

150 µA

100 µA

50 µA

VCE = 4 V

IC  V

120

80

(mA)

C

40

Ta = 85°C

Collector current I

0

0 1.20.80.4

Base-emitter voltage VBE (V)

Cob  V

2.5

(pF)

ob

C

2

1.5

1

BE

25°C

CB

= 4 V

V

CE

−25°C

f = 1 MHz
T

= 25˚C

a

−3

Collector-emitter saturation voltage V

10

−1

10

Collector current IC (mA)

11010

2

40

Forward current transfer ratio h

0

11010

2

Collector current IC (mA)

0.5

Collector output capacitance

(Common base, input open circuited)

0

11010

2

Collector-base voltage VCB (V)

2

SJC00369AED