Panasonic 2SC5622 Datasheet

Power Transistors

B

C

E

2SC5622

Silicon NPN triple diffusion mesa type

For horizontal deflection output

■ Features

• High breakdown voltage: 1 500 V

• High-speed switching

• Wide area of safe operation (ASO)

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Base current I

Collector power
dissipation

TC = 25°CPC40 W

Ta = 25°C3
Junction temperature T
Storage temperature T

CBO

CES

EBO

CP

C

B

j

stg

1 500 V
1 500 V

7V

12 A

6 A
3 A

150 °C

−55 to +150 °C

15.5

±0.5

φ 3.2

±0.1

±0.5

26.5

±0.5

18.6

(10.0)

(1.2)

(2.0)

(2.0)

Solder Dip

±0.3

3.3

10.9

15˚23

±0.5

(4.0)

2.0

1.1

5.45

(4.5)

±0.2

±0.1

±0.3

±0.3

5.5

(2.0)

Marking Symbol: C5622

Internal Connection

Unit: mm

3.0

±0.3

5˚

5˚

(23.4)

5˚

5˚

5˚

0.7

±0.1

1: Base
2: Collector
3: Emitter

TOP-3E Package

±0.5

22.0

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I

Emitter to base voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage V
Base to emitter saturation voltage V

CBO

EBO

FE

CE(sat)IC

BE(sat)IC

Transition frequency f
Diode forward voltage V
Storage time t

stg

Fall time t

VCB = 1 000 V, IE = 050µA
VCB = 1 500 V, IE = 01mA
IE = 500 mA, IC = 07V
VCE = 5 V, IC = 4 A 5 9

= 4 A, IB = 0.8 A 5 V
= 4 A, IB = 0.8 A 1.5 V

VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz

T

IF = 4 A −2V

F

IC = 4 A, Resistance loaded 5.0 µs
IB1 = 0.8 A, IB2 = −1.6 A 0.5 µs

f

1