Panasonic 2SC5609G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC5609G

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SA2021G

 Features

 High forward current transfer ratio h

FE

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

60 V

50 V

7 V

100 mA

200 mA

100 mW

125

–55 to +125

°C

°C

 Package

Code

SSSMini3-F2

Pin Name

1. Base

2. Emitter

3. Collector

 Marking Symbol: 3F

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open) I

Forward current transfer ratio

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Pulse measurement

CBOIC

CEOIC

EBOIE

I

CBO

CEO

h

FE1

h

FE2

CE(sat)IC

T

C

= 10 mA, IE = 0 60 V

= 2 mA, IB = 0 50 V

= 10 mA, IC = 0 7 V

VCB = 20 V, IE = 0 0.1

VCE = 10 V, IB = 0 100

VCE = 10 V, IC = 2 mA 180 390

*

VCE = 2 V, IC = 100 mA 90

= 100 mA, IB = 10 mA 0.1 0.3 V

VCB = 10 V, IE = –2 mA, f = 200 MHz 80 MHz

VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF

re

mA

mA



Publication date : November 2008 SJC00427BED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 40 12080

0

140

40

60

20

100

120

80

2SD5609G_PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C

)

0 4 8 12

0

10

20

30

40

50

2SC5609G_IC-V

CE

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

Ta = 25°C

60 µA

100 µA

80 µA

120 µA

140 µA

IB = 160 µA

40 µA

20 µA

0 0.2 0.6 0.8 1.00.4 1.2

0

20

40

60

80

100

160

140

120

180

2SC5609G_IC-I

B

Collector current I

C

(

mA

)

Base current IB (V

)

VCE = 10 V
Ta = 25°C

0 0.40.2 0.80.6 1.0

0

40

20

60

100

80

120

2SC5609G_IC-V

BE

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V

)

Ta = 75°C

25°C

−25°C

0 0.40.2 0.80.6

0

40

20

60

80

100

2SC5609G_IB-V

BE

Base current I

B

(

mA

)

Base-emitter voltage VBE (V

)

VCE = 10 V

1 10 100 1 000

0.01

0.1

1

Collector current IC (mA

)

Collector-emitter saturation voltage V

CE(sat)

(

V

)

2SC5609G_V

CE(sat)-IC

IC /IB = 10

Ta = 75°C

25°C

−25°C

1 10 100

1 000

0

320

400

80

240

160

Collector current IC (mA

)

Forward current transfer ratio h

FE

2SC5609G_hFE-I

C

VCE = 10 V

Ta = 75°C

25°C

−25°C

2SC5609G

PC  Ta IC  VCE IC  I

IC  VBE IB  VBE V

CE(sat)

B

 I

C

2 SJC00427BED

hFE  I

C