Panasonic 2SC5609 Datasheet
Transistors
2SC5609
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SA2021
■ Features
• High foward current transfer ratio h
SSS-mini type package, allowing downsizing and thinning of the
•
equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
FE
CBO
CEO
EBO
CP
C
C
j
−55 to +125 °C
stg
60 V
50 V
7V
200 mA
100 mA
100 mW
125 °C
+0.05
0.33
–0.02
3
12
+0.05
0.23
–0.02
(0.40)(0.40)
±0.05
0.80
1.20
±0.05
5˚
SSS Mini Type Package (3-pin)
Marking Symbol: 3F
±0.05
0.80
0.15 min.
0 to 0.01
±0.05
1.20
±0.03
0.52
Unit: mm
+0.05
0.10
–0.02
5˚
1: Base
2: Emitter
3: Collector
0.15 min.
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage V
Collector output capacitance C
Transition frequency f
CBO
I
CEO
CBO
CEO
EBO
FE1
h
FE2
CE(sat)
ob
T
VCB = 20 V, IE = 0 0.1 µA
VCE = 10 V, IB = 0 100 µA
IC = 10 µA, IE = 060 V
IC = 2 mA, IB = 050V
IE = 10 µA, IC = 07 V
VCE = 10 V, IC = 2 mA 180 390
VCE = 2 V, IC = 100 mA 90
IC = 100 mA, IB = 10 mA 0.1 0.3 V
VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF
VCB = 10 V, IE = −2 mA, f = 200 MHz 80 MHz
1
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