![](/html/46/4606/4606ea9c57f4226b7551d377cd5946ffbe0611d8d61a51e7b4f19d4044a27647/bg1.png)
Power Transistors
2SC5597
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide area of safe operation (ASO)
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
V
Emitter to base voltage V
Peak collector current I
Collector current I
Base current I
Collector power
dissipation
TC = 25°CPC200 W
Ta = 25°C 3.5
Junction temperature T
Storage temperature T
CBO
CES
CEO
EBO
CP
C
B
j
stg
1 700 V
1 700 V
600 V
7V
30 A
22 A
11 A
150 °C
−55 to +150 °C
20.0
±0.5
±0.5
26.0
±0.5
20.0
(4.0)
(6.0)
(10.0)
(2.0)
(1.5)
(2.5)
Solder Dip
(1.5)
10.9
123
±0.5
5.45
φ 3.3
2.0
±0.3
3.0
±0.3
1.0
±0.2
±0.3
Marking Symbol: C5597
Internal Connection
B
E
Unit: mm
5.0
±0.3
(3.0)
±0.2
(3.0)
(1.5)
±0.3
2.7
0.6
±0.2
1: Base
2: Collector
3: Emitter
TOP-3L Package
C
(2.0)
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage V
Base to emitter saturation voltage V
Transition frequency f
Storage time t
Fall time t
CBO
EBO
FE
CE(sat)IC
BE(sat)IC
stg
VCB = 1 000 V, IE = 050µA
VCB = 1 700 V, IE = 01mA
VEB = 7 V, IC = 050µA
VCE = 5 V, IC = 11 A 6 12
= 11 A, IB = 2.75 A 3 V
= 11 A, IB = 2.75 A 1.5 V
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz
T
IC = 11 A, Resistance loaded 3.0 µs
IB1 = 2.75 A, IB2 = −5.5 A 0.2 µs
f
1
![](/html/46/4606/4606ea9c57f4226b7551d377cd5946ffbe0611d8d61a51e7b4f19d4044a27647/bg2.png)
2SC5597 Power Transistors
PC T
250
)
W
(
200
C
150
100
50
Collector power dissipation P
(1) TC = T
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) Without heat sink
(1)
PC = 12 W
PC = 3.5 W
(2)
0
05025 75 100 125 150
a
a
(3)
Ambient temperature Ta (°C
Area of safe operation (ASO)
3
)
100
I
CP
30
I
C
)
10
0.3
0.1
0.03
0.01
3
1
1
t = 10 ms
25
A
(
C
Collector current I
0.003
0.001
Collector to emitter voltage VCE (V
Non repetitive pulse
T
= 25°C
C
t
t = 1 ms
=
100 µs
D
C
10 20 50 100 200 500
)
Area of safe operation,
horizontal operation ASO
35
30
)
25
A
(
C
20
15
10
Collector current I
5
0
0 1 000500 1 500 2 000
Collector to emitter voltage VCE (V
f = 64 kHz, TC < 90°C
Area of safe operation for
the single pulse load curve
due to discharge in the highvoltage rectifier tube during
horizontal operation
< 1 mA
)
2