Panasonic 2SC5591 Datasheet
Power Transistors
2SC5591
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
• High breakdown voltage: 1 700 V; supporting a large screen CRT
and wider visible angle
• High-speed switching: t
• Low Collector to emitter saturation voltage: V
• Wide area of safe operation (ASO)
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Base current I
Collector power
dissipation
Junction temperature T
Storage temperature T
< 0.2 µs
f
< 3 V
CE(sat)
CBO
CES
V
CEO
EBO
CP
C
B
1 700 V
1 700 V
600 V
7V
30 A
20 A
11 A
TC = 25°CPC70 W
Ta = 25°C 3.5
j
stg
150 °C
−55 to +150 °C
15.5
±0.5
φ 3.2
±0.1
±0.5
26.5
±0.5
18.6
(10.0)
(1.2)
(2.0)
(2.0)
Solder Dip
±0.3
3.3
10.9
15˚23
±0.5
(4.0)
2.0
1.1
5.45
(4.5)
±0.2
±0.1
±0.3
±0.3
5.5
(2.0)
Marking Symbol: C5591
Internal Connection
B
E
Unit: mm
3.0
±0.3
5˚
5˚
(23.4)
5˚
5˚
5˚
0.7
±0.1
1: Base
2: Collector
3: Emitter
TOP-3E Package
C
±0.5
22.0
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage V
Base to emitter saturation voltage V
Transition frequency f
Storage time t
Fall time t
CBO
EBO
FE
CE(sat)IC
BE(sat)IC
stg
VCB = 1 000 V, IE = 050µA
VCB = 1 700 V, IE = 01mA
VEB = 7 V, IC = 050µA
VCE = 5 V, IC = 10 A 6 12
= 10 A, IB = 2.5 A 3 V
= 10 A, IB = 2.5 A 1.5 V
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz
T
IC = 10 A, Resistance loaded 3.0 µs
IB1 = 2.5 A, IB2 = −5.0 A 0.2 µs
f
1
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