Panasonic 2SC5583 Datasheet
Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide area of safe operation (ASO)
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
V
Emitter to base voltage V
Peak collector current I
Collector current I
Base current I
Collector power
dissipation
TC = 25°CPC150 W
Ta = 25°C3
Junction temperature T
Storage temperature T
CBO
CES
CEO
EBO
CP
C
B
j
stg
1 500 V
1 500 V
600 V
7V
30 A
17 A
8 A
150 °C
−55 to +150 °C
20.0±0.5
26.0±0.5
20.0±0.5
(4.0)
(6.0)
(10.0)
(2.0)
(1.5)
(2.5)
Solder Dip
(1.5)
10.9±0.5
123
φ 3.3±0.2
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
Marking Symbol: C5583
Internal Connection
B
E
Unit: mm
5.0±0.3
(3.0)
(3.0)
(1.5)
2.7±0.3
0.6±0.2
1: Base
2: Collector
3: Emitter
TOP-3L Package
C
(2.0)
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage V
Base to emitter saturation voltage V
Transition frequency f
Storage time t
Fall time t
CBO
EBO
FE
CE(sat)IC
BE(sat)IC
stg
VCB = 1 000 V, IE = 050µA
VCB = 1 500 V, IE = 01mA
VEB = 7 V, IC = 050µA
VCE = 5 V, IC = 8.5 A 6 12
= 8.5 A, IB = 2.13 A 3 V
= 8.5 A, IB = 2.13 A 1.5 V
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz
T
IC = 8.5 A, Resistance loaded 2.7 µs
IB1 = 2.13 A, IB2 = −4.25 A 0.2 µs
f
1
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