Panasonic 2SC5580 Datasheet
Transistors
2SC5580
Silicon NPN epitaxial planer type
For high-frequency oscillation / switching
Unit: mm
+0.1
0.3
–0.0
(0.425)
0.15
+0.10
–0.05
■ Features
• High transition frequency f
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
T
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
stg
15 V
8V
3V
50 mA
150 mW
150 °C
−55 to +150 °C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Emitter cutoff current I
Collector to base voltage V
Forward current transfer ratio h
hFE ratio h
FE(RATIO)VCE
Collector to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
EBO
CBO
CE(sat)IC
VEB = 2 V, IC = 02µA
IC = 100 µA, IE = 015 V
VCE = 4 V, IC = 2 mA 100 350
FE
= 4 V, IC = 100 µA/2 mA 0.6 1.5 dB
= 20 mA, IB = 4 mA 0.5 V
VCE = 5 V, IC = 15 mA, f = 200 MHz 0.6 1.1 GHz
T
VCB = 10 V, IE = 0, f = 1 MHz 1.2 1.6 pF
ob
132
(0.65)
(0.65)
1.3
±0.1
2.0
±0.2
10°
1: Base
2: Emitter EIAJ: SC-70
3: Collector S-Mini Type Package
Marking Symbol: 3R
±0.10
1.25
+0.2
±0.1
0.9
0.9
0 to 0.1
±0.1
2.1
5°
±0.1
0.2
–0.1
1
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