Panasonic 2SC5553 Datasheet

Power Transistors

2SC5553

Silicon NPN triple diffusion mesa type

For horizontal deflection output

■ Features

• High breakdown voltage, and high reliability through the use of a
glass passivation layer

• High-speed switching

• Wide area of safe operation (ASO)

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V

V
Emitter to base voltage V
Peak collector current I
Collector current I
Base current I

Collector power
dissipation

TC = 25°CPC70 W

Ta = 25°C 3.5
Junction temperature T
Storage temperature T

CBO

CES

CEO

EBO

CP

C

B

j

stg

1 700 V
1 700 V

600 V

7V

30 A

22 A
11 A

150 °C

−55 to +150 °C

15.5

±0.5

φ 3.2

±0.1

±0.5

26.5

±0.5

18.6

(10.0)

(1.2)

(2.0)

(2.0)

Solder Dip

±0.3

3.3

10.9

15°23

±0.5

(4.0)

2.0

1.1

5.45

(2.0)

(4.5)

±0.2

±0.1

±0.3

±0.3

5.5

Marking Symbol: C5553

Internal Connection

B

E

Unit: mm

3.0

±0.3

5°

5°

(23.4)

±0.5

22.0

5°

5°

5°

0.7

±0.1

1: Base
2: Collector
3: Emitter

TOP-3E Package

C

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I

Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage V
Base to emitter saturation voltage V
Transition frequency f
Storage time t
Fall time t

CBO

EBO

FE

CE(sat)IC

BE(sat)IC

stg

VCB = 1 000 V, IE = 050µA
VCB = 1 700 V, IE = 01mA
VEB = 7 V, IC = 050µA
VCE = 5 V, IC = 11 A 6 12

= 11 A, IB = 2.75 A 3 V
= 11 A, IB = 2.75 A 1.5 V

VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz

T

IC = 11 A, Resistance loaded 3.0 µs
IB1 = 2.75 A, IB2 = −5.5 A 0.2 µs

f

1

2SC5553 Power Transistors

p

PC  T

100

)
W

(

C

Collector power dissipation P

(1) TC = T
(2) With a 100 × 100 × 2 mm

90

80

70

60

50

40

30

20

10

0

05025 75 100 125 150 175

Al heat sink

(3) Without heat sink

(1)

(2)
(3)

a

a

Ambient temperature Ta (°C

Area of safe operation (ASO)

3

)

100

I

CP

30

I

C

)

10

A

(

C

3

t = 10 ms

1

0.3

0.1

Collector current I

0.03

0.01

0.003

0.001
25

1

Collector to emitter voltage VCE (V

Non repetitive pulse

= 25°C

T

C

t =

t = 1 ms

D

C

10 20 50 100 200 500

100 µs

)

Area of safe operation,

horizontal operation ASO

35

30

)

25

A

(

C

20

15

10

Collector current I

5

0

0 1 000500 1 500 2 000

Collector to emitter voltage VCE (V

f = 64 kHz, TC < 90°C
Area of safe operation for
the single pulse load curve
due to discharge in the high­voltage rectifier tube during
horizontal operation

< 1 mA

)

2