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Power Transistors
2SC5552
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide area of safe operation (ASO)
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
V
Emitter to base voltage V
Peak collector current I
Collector current I
Base current I
Collector power
dissipation
TC = 25°CPC65 W
Ta = 25°C 3.5
Junction temperature T
Storage temperature T
CBO
CES
CEO
EBO
CP
C
B
j
stg
1 700 V
1 700 V
600 V
7V
30 A
16 A
8 A
150 °C
−55 to +150 °C
15.5
±0.5
φ 3.2
±0.1
±0.5
26.5
±0.5
18.6
(10.0)
(1.2)
(2.0)
(2.0)
Solder Dip
±0.3
3.3
10.9
15°23
±0.5
(4.0)
2.0
1.1
5.45
(2.0)
(4.5)
±0.2
±0.1
±0.3
±0.3
5.5
Marking Symbol: C5552
Internal Connection
B
E
Unit: mm
3.0
±0.3
5°
5°
(23.4)
±0.5
22.0
5°
5°
5°
0.7
±0.1
1: Base
2: Collector
3: Emitter
TOP-3E Package
C
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage V
Base to emitter saturation voltage V
Transition frequency f
Storage time t
Fall time t
CBO
EBO
CE(sat)IC
BE(sat)IC
stg
VCB = 1 000 V, IE = 050µA
VCB = 1 700 V, IE = 01mA
VEB = 7 V, IC = 050µA
VCE = 5 V, IC = 8 A 6 12
FE
= 8 A, IB = 2 A 3 V
= 8 A, IB = 2 A 1.5 V
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz
T
IC = 8 A, Resistance loaded 3.0 µs
IB1 = 2 A, IB2 = −4 A 0.2 µs
f
1