Panasonic 2SC5546 Datasheet

Power Transistors

2SC5546

Silicon NPN triple diffusion mesa type

For horizontal deflection output

■ Features

• High breakdown voltage, and high reliability through the use of a
glass passivation layer

• High-speed switching

• Wide area of safe operation (ASO)

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V

Collector to emitter voltage V

V

Emitter to base voltage V

Peak collector current I

Collector current I

Base current I

Collector power

dissipation

TC = 25°CPC70 W

Ta = 25°C 3.5

Junction temperature T

Storage temperature T

CBO

CES

CEO

EBO

CP

C

B

j

stg

1 700 V

1 700 V

600 V

7V

30 A

18 A

8 A

150 °C

−55 to +150 °C

15.5

±0.5

φ 3.2

±0.1

±0.5

26.5

±0.5

18.6

(10.0)

(1.2)

(2.0)

(2.0)

Solder Dip

±0.3

3.3

10.9

15°23

±0.5

(4.0)

2.0

1.1

5.45

(2.0)

(4.5)

±0.2

±0.1

±0.3

±0.3

5.5

Marking Symbol: C5546

Internal Connection

B

E

Unit: mm

3.0

±0.3

5°

5°

(23.4)

±0.5

22.0

5°

5°

5°

0.7

±0.1

1: Base
2: Collector
3: Emitter

TOP-3E Package

C

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I

Emitter cutoff current I

Forward current transfer ratio h

Collector to emitter saturation voltage V

Base to emitter saturation voltage V

Transition frequency f

Storage time t

Fall time t

CBO

EBO

CE(sat)IC

BE(sat)IC

stg

VCB = 1 000 V, IE = 050µA

VCB = 1 700 V, IE = 01mA

VEB = 7 V, IC = 050µA

VCE = 5 V, IC = 10 A 6 12

FE

= 10 A, IB = 2.5 A 3 V

= 10 A, IB = 2.5 A 1.5 V

VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz

T

IC = 10 A, Resistance loaded 3.0 µs

IB1 = 2.5 A, IB2 = −5.0 A 0.2 µs

f

1