Panasonic 2SC5518 Datasheet

Po wer Transistors
2SC5518
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Features
High-speed switching
Wide area of safe operation (ASO)
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Symbol
V V V I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
CES
EBO
=25˚C)
C
Ratings
1500 1500
5
14
7
3.5 40
3
150
–55 to +150
Unit
V V V A A A
W
˚C ˚C
4.5
4.0
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
3.3±0.3
15.5±0.5
5°
123
φ3.2±0.1
5° 5°
26.5±0.5
5°
2.0 2.0 1.2 10.0
18.6±0.5
5.45±0.3
5.5±0.3
2.0
TOP–3E Full Pack Package
Unit: mm
3.0±0.3
23.4
5°
5°
0.7±0.1
1:Base 2:Collector 3:Emitter
22.0±0.5
Electrical Characteristics (T
Parameter
Collector cutoff current
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time Diode forward voltage
C
Symbol
I
CBO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
=25˚C)
Conditions
VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 IE = 500mA, IC = 0 VCE = 5V, IC = 5A IC = 5A, IB = 1A IC = 5A, IB = 1A VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 5A, IB1 = 1A, IB2 = –2A
IF = 5A
min
5 5
typ3max
50
1
10
3
1.5
5.0
0.5 –2
Unit
µA
mA
V
V V
MHz
µs µs
V
1
Po wer Transistors 2SC5518
PC—Ta
100
)
90
W
(
80
C
70
60
50
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
(1) TC=Ta (2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(1)
(2) (3)
Ambient temperature Ta (˚C
Area of safe operation, horizontal operation ASO
20
f=15.75kHz, TC<90˚C Area of safe operation with
)
15
A
(
C
10
5
Collector current I
0
0 2000500 15001000
)
Collector to emitter voltage VCE (V
respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation.
<1mA
)
2
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