Panasonic 2SC5478 Datasheet

Po wer Transistors
2SC5478
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Features
High-speed switching
Wide area of safe operation (ASO)
Absolute Maximum Ratings (T
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Symbol
V V V V I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
CES
CEO
EBO
=25˚C)
C
Ratings
1700 1700
600
5 25 14
7.5 60
3.0
150
–55 to +150
Unit
V V V V A A A
W
˚C ˚C
4.5
4.0
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
3.3±0.3
15.5±0.5
5°
123
φ3.2±0.1
5° 5°
26.5±0.5
5°
2.0 2.0 1.2 10.0
18.6±0.5
5.45±0.3
5.5±0.3
2.0
TOP–3E Full Pack Package
Unit: mm
3.0±0.3
23.4
5°
5°
0.7±0.1
1:Base 2:Collector 3:Emitter
22.0±0.5
Electrical Characteristics (T
Parameter
Collector cutoff current
Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time
C
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
=25˚C)
Conditions
VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 7A IC = 7A, IB = 1.75A IC = 7A, IB = 1.75A VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 7A, IB1 = 1.75A, IB2 = –3.5A
min
5
typ3max
50
1 50 12
3
1.5
2.7
0.2
Unit
µA
mA
µA
V V
MHz
µs µs
1
Po wer Transistors 2SC5478
PC—Ta
100
)
90
W
(
80
C
70
60
50
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
(1) TC=Ta (2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(1)
(2) (3)
Ambient temperature Ta (˚C
Area of safe operation, horizontal operation ASO
35
30
) A
(
25
C
20
15
10
Collector current I
5
0
0 2000500 15001000
)
Collector to emitter voltage VCE (V
f=64kHz, TC<90˚C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation.
<1mA
)
2
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