Panasonic 2SC5474 Datasheet
Transistor
2SC5474 (Tentative)
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Features
■
●
High transition frequency fT.
●
High gain of 8.9dB and low noise of 1.8dB at 3V.
●
Optimum for RF amplification of a portable telephone and
pager.
●
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
9
6
1
30
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
1.6±0.15
0.8±0.1 0.40.4
1
0.5
1.6±0.1
1.0±0.1
0.5
2
0.3
0.75±0.15
0.45±0.1
1:Base
2:Emitter EIAJ:SC–75
3:Collector SS-Mini Type Package
0.2±0.1
0 to 0.1
Marking symbol : 3A
3
Unit: mm
–0.05
+0.1
0.2
–0.05
+0.1
0.15
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Noise figure
Foward transfer gain
Symbol
I
CBO
I
EBO
h
FE
C
ob
f
T
NF
| S
21e
Conditions
VCB = 9V, IE = 0
VEB = 1V, IC = 0
VCE = 3V, IC = 10mA
VCB = 3V, IE = 0, f = 1MHz
VCE = 3V, IC = 10mA, f = 2GHz
VCE = 3V, IC = 3mA, f = 1.5GHz
2
|
VCE = 3V, IC = 10mA, f = 2GHz
min
80
typ
0.4
12.0
1.8
8.9
max
1
1
200
Unit
µA
µA
pF
GHz
dB
dB
1
Transistor 2SC5474
hFE — I
C
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
NF — I
C
5
4
)
dB
(
3
)
VCE=3V
f=1.5GHz
fT — I
C
14
12
)
GHz
(
10
T
8
6
4
Transition frequency f
2
0
1 3 10 30 100
Collector current IC (mA
VCE=3V
| S
|2 — I
21e
10
)
dB
(
8
2
6
4
2
C
VCE=3V
f=2GHz
Forward transfer gain |S21e|
0
1 3 10 30 100
)
Collector current IC (mA
)
2
Noise figure NF
1
0
0.1 0.3 1 3 10
Collector current IC (mA
)
2
Loading...