Panasonic 2SC5473 Datasheet
Transistor
2.1±0.1
2.0±0.1
0.3
+0.1
0
0.650.65
1.3±0.1
0.7±0.1
0.5±0.1 0.2
0 to 0.1
1.25±0.100.425 0.425
0.15
+0.10
–0.05
0.2±0.1
2SC5473 (Tentative)
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Features
■
●
High transition frequency fT.
●
High gain of 8.9dB and low noise of 1.8dB at 3V.
●
Optimum for RF amplification of a portable telephone and
pager.
●
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
9
6
1
30
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
Unit: mm
1:Emitter
2:Collector
3:Emitter EIAJ:SC–82
4:Base S-Mini Type Package
Marking symbol : 3A
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Noise figure
Foward transfer gain
Symbol
I
CBO
I
EBO
h
FE
C
ob
f
T
NF
| S
21e
Conditions
VCB = 9V, IE = 0
VEB = 1V, IC = 0
VCE = 3V, IC = 10mA
VCB = 3V, IE = 0, f = 1MHz
VCE = 3V, IC = 10mA, f = 2GHz
VCE = 3V, IC = 3mA, f = 1.5GHz
2
|
VCE = 3V, IC = 10mA, f = 2GHz
min
80
typ
0.4
12.0
1.8
8.9
max
1
1
200
Unit
µA
µA
pF
GHz
dB
dB
1
Transistor 2SC5473
hFE — I
C
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
NF — I
C
5
4
)
dB
(
3
)
VCE=3V
f=1.5GHz
fT — I
C
14
12
)
GHz
(
10
T
8
6
4
Transition frequency f
2
0
1 3 10 30 100
Collector current IC (mA
VCE=3V
| S
|2 — I
21e
10
)
dB
(
8
2
6
4
2
C
VCE=3V
f=2GHz
Forward transfer gain |S21e|
0
1 3 10 30 100
)
Collector current IC (mA
)
2
Noise figure NF
1
0
0.1 0.3 1 3 10
Collector current IC (mA
)
2
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