Panasonic 2SC5440 Datasheet

Po wer Transistors

2SC5440

Silicon NPN triple diffusion mesa type

For horizontal deflection output

Features

■

●

High breakdown voltage, and high reliability through the use of a
glass passivation layer

●

High-speed switching

●

Wide area of safe operation (ASO)

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

Ratings

1500
1500

600

5
25
15

7.5
60

3.0

150

–55 to +150

Unit

V
V
V
V
A
A
A

W

˚C
˚C

4.5

4.0

2.0±0.2

1.1±0.1

5.45±0.3

0.7±0.1

3.3±0.3

15.5±0.5

5°

123

φ3.2±0.1

5° 5°

26.5±0.5

5°

2.0 2.0 1.2 10.0

18.6±0.5

5.45±0.3

5.5±0.3

2.0

TOP–3E Full Pack Package

Unit: mm

3.0±0.3

23.4

5°

5°

0.7±0.1

1:Base
2:Collector
3:Emitter

22.0±0.5

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time

C

Symbol

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

t

stg

t

f

=25˚C)

Conditions

VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 7.5A
IC = 7.5A, IB = 1.88A
IC = 7.5A, IB = 1.88A
VCE = 10V, IC = 0.1A, f = 0.5MHz

IC = 7.5A, IB1 = 1.88A, IB2 = –3.76A

min

5

typ3max

50

1
50
12

3

1.5

2.7

0.2

Unit

µA

mA

µA

V
V

MHz

µs
µs

1

Po wer Transistors 2SC5440

PC—Ta V

100

)

90

W

(

80

C

70

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(1)

(2)
(3)

Ambient temperature Ta (˚C

Area of safe operation (ASO)

100

I

CP

10ms

I

10

)
A

(

C

C

1

DC

1ms

t=100µs

hFE—I

TC=100˚C

25˚C

–25˚C

C

VCE=5V

)

5000

V

(

CE(sat)

4000

3000

2000

1000

CE(sat)—IC

25˚C

TC=100˚C

IC/IB=4

–25˚C

100

FE

10

Forward current transfer ratio h

0

Collector to emitter saturation voltage V

0.1 1 10 100

)

Collector current IC (A

)

1

0.001 10010.01 100.1

Collector current IC (A

)

Area of safe operation, horizontal operation ASO

35

30

)
A

(

25

C

20

f=64kHz, TC<90˚C
Area of safe operation with
respect to the single pulse
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.

0.1

Collector current I

0.01

Non repetitive pulse
T

=25˚C

C

0.001
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

max.

CEO

V

Collector current I

)

15

10

5

0

0 2000500 15001000

<1mA

Collector to emitter voltage VCE (V

)

2