Panasonic 2SC5419 Datasheet

Transistor

2SC5419

Silicon NPN triple diffusion planer type

For low-frequency output amplification

Features

■

●

High collector to emitter voltage V

●

High transition frequency fT.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*1

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*1

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

300
300

7

100

70

1.0

150

Unit

V
V

V
mA
mA

W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

hFE Rank classification

Symbol

I

CEO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

Rank P Q R

h

FE

30 ~ 100 60 ~ 150 100 ~ 220

Conditions

VCE = 120V, IB = 0
IC = 100µA, IB = 0
IE = 1µA, IC = 0

*1

VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

300

7

30

typ50max

1

220

1.2

10

Unit

µA

V
V

V

MHz

pF

1

Transistor

2SC5419

PC — Ta IC — V

2.0

)
W

(

1.6

C

1.2

0.8

0.4

Collector power dissipation P

0

120

100

)
mA

(

80

C

60

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

IC — I

B

VCE=10V
Ta=25˚C

CE

120

100

)

mA

(

80

C

0.6mA

60

40

Collector current I

20

0

012108264

)

Collector to emitter voltage VCE (V

)

10

V

(

3

CE(sat)

1

0.3

0.1

1.0mA

0.8mA

V

25˚C

1.4mA

1.2mA

CE(sat)

Ta=75˚C

1.6mA

1.8mA

— I

–25˚C

Ta=25˚C

IB=2.0mA

0.4mA

0.2mA

C

IC/IB=10

120

100

)
mA

(

C

Collector current I

)

1200

1000

)
µA

(

800

B

600

80

60

40

20

0

01.21.00.80.2 0.60.4

Base to emitter voltage VBE (V

IC — V

BE

25˚C

Ta=75˚C –25˚C

IB — V

BE

VCE=10V

VCE=10V
Ta=25˚C

)

40

Collector current I

20

0

02.42.01.60.4 1.20.8

Base current IB (mA

hFE — I

C

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

1 10 100 10003 30 300

Ta=75˚C

25˚C

–25˚C

VCE=10V

Collector current IC (mA

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

1 10 100 10003 30 300

)

Collector current IC (mA

Cob — V

12

)

pF

(

10

ob

8

6

4

2

CB

)

f=1MHz
I

=0

E

Ta=25˚C

400

Base current I

200

0

01.00.80.2 0.60.4

Base to emitter voltage VBE (V

)

Collector output capacitance C

0

1 3 10 30 100

)

Collector to base voltage VCB (V

)

2