Panasonic 2SC5393 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SC5393

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

600
600
400

7

10

5
1

40

2

150

–55 to +150

FE

Unit

V
V
V
V
A
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time

Symbol

I

CBO

I

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

stg

t

f

=25˚C)

C

Conditions

VCB = 600V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 1.5A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,
VCC = 150V

min

10

8

typ30max

100
100

60

1
2

2.0

0.3

Unit

µA
µA

V
V

MHz

µs
µs

1

Po wer Transistors 2SC5393

PC— Ta Area of safe operation (ASO)

50

)
W

(

(1)

40

C

30

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

100

I

CP

10

)

I

A

(

C

C

10ms

1

t=500µs

1ms

1s

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

0.1

Collector current I

0.01

0.001
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

)

2