Panasonic 2SC5379 Datasheet

Transistor

2SC5379

Silicon NPN epitaxial planer type

For low-voltage low-noise high-frequency oscillation

Features

■

●

Low noise figure NF.

●

High gain.

●

High transition frequency fT.

●

SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

15

8
2

80
125
125

–55 ~ +125

Unit

V
V
V

mA

mW

˚C
˚C

1.6±0.15

0.8±0.1 0.40.4

1

0.5

1.6±0.1

1.0±0.1

0.5

2

0.3

0.75±0.15

0.45±0.1

1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package

0.2±0.1

0 to 0.1

Marking symbol : HT

Unit: mm

+0.1

3

+0.1

–0.05

0.2

–0.05

0.15

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Noise figure

*

hFE Rank classification

Symbol

I

CBO

I

EBO

*

h

FE

f

T

C

ob

| S

21e

NF

2

|

Rank Q R S

h

FE

80 ~ 115 95 ~ 155 135 ~ 200

Marking Symbol HTQ HTR HTS

Conditions

VCB = 10V, IE = 0
VEB = 1V, IC = 0
VCE = 5V, IC = 10mA
VCE = 5V, IC = 10mA, f = 2GHz
VCB = 5V, IE = 0, f = 1MHz
VCE = 5V, IC = 10mA, f = 1GHz
VCE = 5V, IC = 3mA, f = 1GHz

min

80

8.5

typ

7.0

0.6

11.0

1.6

max

1
1

200

1.0

2

Unit

µA
µA

GHz

pF
dB
dB

1

Transistor

2SC5379

PC — Ta IC — V

150

)
mW

125

(

C

100

75

50

25

Collector power dissipation P

0

0 16040 12080 14020 10060

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

)

)

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

CE

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

0654132

IB=300µA

Collector to emitter voltage VCE (V

hFE — I

C

240

FE

200

160

120

80

40

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

250µA
200µA
150µA

100µA

50µA

VCE=5V

)

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

01.21.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

10

)

8

GHz

(

T

6

4

2

Transition frequency f

0

020164128

IC — V

BE

VCE=5V

25˚C

Ta=75˚C –25˚C

fT — I

C

VCE=5V

Collector current IC (mA

)

)

)
pF

(

Cob — V

1.0

0.8

ob

0.6

0.4

0.2

CB

Collector output capacitance C

0

0108264

Collector to base voltage VCB (V

2

15

)
dB

(

12

2

9

6

3

Forward transfer gain |S21e|

0

020164128

)

Collector current IC (mA

| S

21e

|2 — I

C

VCE=5V
f=1GHz
Ta=25˚C

NF — I

C

3.0

2.4

)
dB

(

1.8

1.2

Noise figure NF

0.6

0

0108264

)

Collector current IC (mA

VCE=5V
f=1GHz
Ta=25˚C

)