
Transistor
Maintenance/
Discontinued
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2SC5378
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Features
■
●
Low noise figure NF.
●
High gain.
●
High transition frequency fT.
●
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
8
2
80
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
2.1±0.1
1.25±0.1 0.4250.425
1
1.3±0.10.9±0.1
2.0±0.2
0.650.2 0.65
2
0.7±0.1
0.2±0.1
0 to 0.1
1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package
Marking symbol : HT
3
Unit: mm
–0
+0.1
0.3
–0.05
+0.1
0.15
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Noise figure
Foward transfer gain
*1
hFE Rank classification
Rank Q R S
h
FE
80 ~ 115 95 ~ 155 135 ~ 200
Symbol
I
CBO
I
EBO
*1
h
FE
C
ob
f
T
NF
| S
21e
Conditions
VCB = 10V, IE = 0
VEB = 1V, IC = 0
VCE = 5V, IC = 10mA
VCB = 5V, IE = 0, f = 1MHz
VCE = 5V, IC = 10mA, f = 2GHz
VCE = 5V, IC = 3mA, f = 1GHz
2
|
VCE = 5V, IC = 10mA, f = 1GHz
min
80
8.5
typ
0.6
1.6
11
max
200
7
Unit
1
µA
1
µA
1
2
pF
GHz
dB
dB
1

Transistor
Maintenance/
Discontinued
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2SC5378
PC — Ta IC — V
200
)
mW
(
160
C
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
CE
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
0108264
)
Collector to emitter voltage VCE (V
Ta=25˚C
IB=600µA
500µA
400µA
300µA
200µA
100µA
180
FE
150
120
90
60
30
Forward current transfer ratio h
0
1 10 100 10003 30 300
)
hFE — I
C
VCE=5V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
2

Request for your special attention and precautions in using the technical information and
Maintenance/
Discontinued
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semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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