Panasonic 2SC5363 Datasheet

Transistor

2SC5363(Tentative)

Silicon NPN epitaxial planer type

For low-voltage high-frequency amplification

Features

■

●

High transition frequency fT.

●

Small collector output capacitance Cob.

●

SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

9
6
2

30
125
125

–55 ~ +125

Unit

V
V
V

mA

mW

˚C
˚C

1.6±0.15

0.8±0.1 0.40.4

1

0.5

1.6±0.1

1.0±0.1

0.5

2

0.3

0.75±0.15

0.45±0.1

1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package

0.2±0.1

0 to 0.1

Marking symbol : 3Y

3

Unit: mm

–0.05

+0.1

0.2

–0.05

+0.1

0.15

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Foward transfer gain
Noise figure

Symbol

I

CBO

I

EBO

h

FE

C

ob

f

T

| S
NF

21e

Conditions

VCB = 5V, IE = 0
VEB = 1V, IC = 0
VCE = 3V, IC = 10mA
VCB = 3V, IE = 0, f = 1MHz
VCE = 3V, IC = 10mA, f = 1.5GHz

2

|

VCE = 0.3V, IC = 1mA, f = 0.9GHz
VCE = 0.3V, IC = 1mA, f = 0.9GHz

min

40

typ

100

0.4
10

6.5

1.7

max

1
1

200

0.7

Unit

µA
µA

pF

GHz

dB
dB

1

Transistor

2SC5363

PC — Ta IC — V

150

)
mW

125

(

C

100

75

50

25

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Ta=75˚C

–25˚C

Collector current IC (mA

)

C

IC/IB=10

)

CE

60

50

)

mA

(

40

C

30

20

Collector current I

10

0

0654132

IB=600µA

Collector to emitter voltage VCE (V

hFE — I

C

120

FE

100

Ta=75˚C

80

25˚C

60

40

20

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

–25˚C

Collector current IC (mA

Ta=25˚C

500µA
400µA

300µA
200µA

100µA

VCE=3V

)

30

25

)
mA

(

20

C

15

10

Collector current I

5

0

01.21.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

1000

300

)
GHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.1 1 10 1000.3 3 30

IC — V

BE

VCE=3V

25˚C

Ta=75˚C

fT — I

–25˚C

C

VCE=3V
f=1.5GHz

Collector current IC (mA

)

)

| S

|2 — I

21e

12

)
dB

10

(

2

8

6

4

2

Forward transfer gain |S21e|

0

0.1 1 10 1000.3 3 30

Collector current IC (mA

2

C

VCE=0.3V
f=900MHz

NF — I

C

4.8

4.0

VCE=0.3V
f=900MHz

)

dB

(

3.2

2.4

1.6

)
pF

(

1.2

1.0

ob

0.8

0.6

0.4

Cob — V

CB

IE=0
f=1MHz
Ta=25˚C

Noise figure NF

0.8

0.2

Collector output capacitance C

0

0.1 0.3 1 3 10

)

Collector current IC (mA

)

0

1 3 10 30 100

Collector to base voltage VCB (V

)